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BB170X

P1-P3P4-P6P7-P8
1. Product profile
1.1 General description
The BB170 is a variable capacitance diode, fabricated in planar technology, and
encapsulated in the SOD323 (SC-76) very small SMD plastic package.
1.2 Features and benefits
Excellent linearity
Very small SMD plastic package
C
d(28V)
= 2.6 pF; C
d(1V)
to C
d(28V)
ratio = 15
Low series resistance
1.3 Applications
Voltage Controlled Oscillators (VCO)
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
BB170
VHF variable capacitance diode
Rev. 1 — 25 March 2013 Product data sheet
Table 1. Pinning
Pin Description Simplified outline Symbol
1 cathode
[1]
2 anode
21
sym008
Table 2. Ordering information
Type number Package
Name Description Version
BB170 SC-76 plastic surface-mounted package; 2 leads SOD323
BB170 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 March 2013 2 of 8
NXP Semiconductors
BB170
VHF variable capacitance diode
4. Marking
5. Limiting values
6. Characteristics
[1] See Figure 2.
[2] See Figure 1
and Figure 3.
Table 3. Marking
Type number Marking code
BB170 4H
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current - 20 mA
T
stg
storage temperature 55 +150 C
T
j
junction temperature 55 +125 C
Table 5. Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
R
reverse current V
R
=30V
[1]
--10nA
V
R
=30V; T
j
=85C
[1]
--200nA
r
s
diode series resistance f = 100 MHz; C
d
=12pF - - 0.9
C
d
diode capacitance f = 1 MHz
[2]
V
R
= 1 V 36.8 - 41.8 pF
V
R
= 28 V 2.4 2.6 2.75 pF
C
d(1V)
/C
d(28V)
diode capacitance ratio
(1Vto28V)
f = 1 MHz 14.5 15 -
BB170 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 25 March 2013 3 of 8
NXP Semiconductors
BB170
VHF variable capacitance diode
f=1MHz; T
j
=25C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
T
j
=0C to 85 C.
Fig 2. Reverse current as a function of junction
temperature; maximum values.
Fig 3. Diode capacitance temperature coefficient as a
function of reverse voltage; typical values.
mlc266
20
30
10
40
50
C
d
(pF)
0
V
R
(V)
10
−1
10
2
101
001aae541
10
2
10
10
3
I
R
(nA)
1
T
j
(°C)
0 1008040 6020
V
R
(V)
10
−1
10
2
101
001aag774
10
−3
10
−4
10
−2
TC
Cd
(K
−1
)
10
−5
P1-P3P4-P6P7-P8

BB170X

Mfr. #:
Buy BB170X
Manufacturer:
NXP Semiconductors
Description:
Varactor Diodes VHF variable capacitance diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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