RN1301~RN1306
2014-03-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1301, RN1302, RN1303
RN1304, RN1305, RN1306
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors.
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN2301 to RN2306
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage
RN1301 to 1306
V
CEO
50 V
RN1301 to 1304 10
Emitter-base voltage
RN1305, 1306
V
EBO
5
V
Collector current I
C
100 mA
Collector power dissipation P
C
100 mW
Junction temperature T
j
150 °C
Storage temperature range
RN1301 to 1306
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1A
Weight: 6 mg (typ.)
Unit: mm
Type No. R1 (kΩ)R2 (kΩ)
RN1301 4.7 4.7
RN1302 10 10
RN1303 22 22
RN1304 47 47
RN1305 2.2 47
RN1306 4.7 47
USM
Start of commercial production
1987-09
