OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NE5517DR2

P1-P3P4-P6P7-P9P10-P12P13-P14
NE5517, NE5517A, AU5517
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (Note 4)
Characteristic
Test Conditions Symbol
AU5517/NE5517 NE5517A
Unit
Min Typ Max Min Typ Max
Input Offset Voltage
Overtemperature Range
I
ABC
5.0 mA
V
OS
0.4
0.3
5.0
5.0
0.4
0.3
2.0
5.0
2.0
mV
DV
OS
/DT
Avg. TC of Input Offset Voltage 7.0 7.0
mV/°C
V
OS
Including Diodes Diode Bias Current
(I
D
) = 500 mA
0.5 5 0.5 2.0 mV
Input Offset Change
5.0 mA ≤ I
ABC
≤ 500 mA
V
OS
0.1 0.1 3.0 mV
Input Offset Current I
OS
0.1 0.6 0.1 0.6
mA
DI
OS
/DT
Avg. TC of Input Offset Current 0.001 0.001
mA/°C
Input Bias Current
Overtemperature Range
I
BIAS
0.4
1.0
5.0
8.0
0.4
1.0
5.0
7.0
mA
DI
B
/DT
Avg. TC of Input Current 0.01 0.01
mA/°C
Forward Transconductance
Overtemperature Range
g
M
6700
5400
9600 13000 7700
4000
9600 12000
mmho
g
M
Tracking 0.3 0.3 dB
Peak Output Current
R
L
= 0, I
ABC
= 5.0 mA
R
L
= 0, I
ABC
= 500 mA
R
L
= 0, Overtemperature
Range
I
OUT
350
300
5.0
500
650
3.0
350
300
5.0
500
7.0
650
mA
Peak Output Voltage
Positive
Negative
R
L
= ∞, 5.0 mA ≤ I
ABC
≤ 500 mA
R
L
= ∞, 5.0 mA ≤ I
ABC
≤ 500 mA
V
OUT
+12
−12
+14.2
−14.4
+12
−12
+14.2
−14.4
V
Supply Current
I
ABC
= 500 mA, both channels
I
CC
2.6 4.0 2.6 4.0 mA
V
OS
Sensitivity
Positive
Negative
D V
OS
/D V+
D V
OS
/D V−
20
20
150
150
20
20
150
150
mV/V
Common-mode Rejection
Ration
CMRR 80 110 80 110 dB
Common-mode Range ±12 ±13.5 ±12 ±13.5 V
Crosstalk Referred to Input (Note 5)
20 Hz < f < 20 kHz
100 100 dB
Differential Input Current I
ABC
= 0, Input = ±4.0 V I
IN
0.02 100 0.02 10 nA
Leakage Current I
ABC
= 0 (Refer to Test Circuit) 0.2 100 0.2 5.0 nA
Input Resistance R
IN
10 26 10 26
kW
Open-loop Bandwidth B
W
2.0 2.0 MHz
Slew Rate Unity Gain Compensated SR 50 50
V/ms
Buffer Input Current 5 IN
BUFFER
0.4 5.0 0.4 5.0
mA
Peak Buffer Output Voltage 5 VO
BUFFER
10 10 V
DV
BE
of Buffer
Refer to Buffer V
BE
Test
Circuit (Note 6)
0.5 5.0 0.5 5.0 mV
4. These specifications apply for V
S
= ±15 V, T
amb
= 25°C, amplifier bias current (I
ABC
) = 500 mA, Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
5. These specifications apply for V
S
= ±15 V, I
ABC
= 500 mA, R
OUT
= 5.0 kW connected from the buffer output to −V
S
and the input of the buffer
is connected to the transconductance amplifier output.
6. V
S
= ±15, R
OUT
= 5.0 kW connected from Buffer output to −V
S
and 5.0 mA ≤ I
ABC
≤ 500 mA.
NE5517, NE5517A, AU5517
http://onsemi.com
5
TYPICAL PERFORMANCE CHARACTERISTICS
V
OUT
V
CMR
V
OUT
μ
10
10
10
10
1
PEAK OUTPUT CURRENT ( A)
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
+125°C
4
3
2
+25°C
-55°C
10
10
10
10
10
4
3
2
5
-50°C -25°C0°C25°C50°C75°C100°C125°C
0V
(+)V
IN
= (−)V
IN
= V
OUT
= 36V
LEAKAGE CURRENT (pA)
AMBIENT TEMPERATURE (T
A
)
μ
10
10
10
10
10
TRANSCONDUCTANCE (gM) — ( ohm)
4
3
2
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
+125°C
+25°C
-55°C
5
gM
mq
m
M
PINS 2, 15
OPEN
10
10
1
0.1
0.01
INPUT RESISTANCE (MEG )
1
2
0.1mA1mA10mA 100mA 1000m
A
AMPLIFIER BIAS CURRENT (I
ABC
)
PINS 2, 15
OPEN
10
10
10
10
1
INPUT LEAKAGE CURRENT (pA)
3
2
4
INPUT DIFFERENTIAL VOLTAGE
+125°C
+25°C
012345 67
5
INPUT OFFSET VOLTAGE (mV)
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 3. Input Offset Voltage
V
S
= ±15V
+125°C
+25°C
-55°C
+125°C
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
5
PEAK OUTPUT VOLTAGE AND
4
3
2
1
0
-1
-2
-3
-4
-5
-6
-7
-8
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
T
amb
= 25°C
V
CMR
RLOAD = ∞
COMMON-MODE RANGE (V)
10
10
10
1
0.1
INPUT OFFSET CURRENT (nA)
2
3
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 4. Input Bias Current
V
S
= ±15V
+125°C
+25°C
-55°C
10
10
10
10
1
INPUT BIAS CURRENT (nA)
3
4
0.1mA1mA10mA 100mA 1000mA
AMPLIFIER BIAS CURRENT (I
ABC
)
Figure 5. Input Bias Current
V
S
= ±15V
+125°C
+25°C
-55°C
2
Figure 6. Peak Output Current
Figure 7. Peak Output Voltage and
Common-Mode Range
Figure 8. Leakage Current
Figure 9. Input Leakage Figure 10. Transconductance
Figure 11. Input Resistance
Ω
V
S
= ±15V
V
S
= ±15V
V
S
= ±15V
NE5517, NE5517A, AU5517
http://onsemi.com
6
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1 VOLT RMS (dB)
20
0
-20
-40
-60
-80
-100
OUTPUT VOLTAGE RELATIVE TO
0.1mA1mA10mA 100mA 1000mA
I
ABC
AMPLIFIER BIAS CURRENT (mA)
VS = ±15V
R
L
= 10kW
OUTPUT NOISE
20kHz BW
V
IN
= 40mV
P-P
V
IN
= 80mV
P-P
V
S
= ±15V
T
amb
= +25°C
C
IN
C
OUT
7
6
5
4
3
2
1
0
0.1mA1mA10mA 100mA 1000mA
CAPACITANCE (pF)
AMPLIFIER BIAS CURRENT (I
ABC
)
0.1mA1mA10mA 100mA 1000mA
2000
1800
1600
1400
1200
1000
800
600
400
200
0
AMPLIFIER BIAS VOLTAGE (mV)
AMPLIFIER BIAS CURRENT (I
ABC
)
-55°C
+25°C
+125°C
OUTPUT DISTORTION (%)
100
10
1
0.1
0.01
1 10 100 1000
DIFFERENTIAL INPUT VOLTAGE (mV
P-P
)
600
500
400
300
200
100
0
10 100 1k 10k 100k
OUTPUT NOISE CURRENT (pA/Hz)
FREQUENCY (Hz)
I
ABC
= 1mA
I
ABC
= 100mA
Figure 12. Amplifier Bias Voltage vs.
Amplifier Bias Current
Figure 13. Input and Output
Capacitance
Figure 14. Distortion vs. Differentia
l
Input Voltage
Figure 15. Voltage vs. Amplifier Bias Current
Figure 16. Noise vs. Frequency
I
ABC
= 1mA
R
L
= 10kW
Figure 17. Leakage Current Test Circuit Figure 18. Differential Input Current Test Circuit
Figure 19. Buffer V
BE
Test Circuit
4, 13
2, 15
3, 14
−
+
NE5517
11
6
1, 15
5, 12
7, 10
8, 9
A
+36V
4, 13
2, 15
3, 14
−
+
NE5517
11
6
1, 10
5, 12
A
+15V
−15V
4V
V
V+
50kW
V−
P1-P3P4-P6P7-P9P10-P12P13-P14

NE5517DR2

Mfr. #:
Buy NE5517DR2
Manufacturer:
ON Semiconductor
Description:
Transconductance Amplifiers Transconductance
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet