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SQM85N15-19_GE3

P1-P3P4-P6P7-P9P10-P11
SQM85N15-19
www.vishay.com
Vishay Siliconix
S15-2970-Rev. E, 21-Dec-15
1
Document Number: 68668
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 150 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified
d
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 150
R
DS(on)
() at V
GS
= 10 V 0.019
I
D
(A) 85
Configuration Single
Package TO-263
D
G
S
N-Channel MOSFET
TO-263
Top View
G
D
S
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
150
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
85
A
T
C
= 125 °C 50
Continuous Source Current (Diode Conduction)
a
I
S
120
Pulsed Drain Current
b
I
DM
140
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
52
Single Pulse Avalanche Energy E
AS
135 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
375
W
T
C
= 125 °C 125
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
0.4
SQM85N15-19
www.vishay.com
Vishay Siliconix
S15-2970-Rev. E, 21-Dec-15
2
Document Number: 68668
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 150 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.5 3.0 3.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 150 V - - 1
μA V
GS
= 0 V V
DS
= 150 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 150 V, T
J
= 175 °C - - 300
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 120 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 30 A - 0.016 0.019
V
GS
= 10 V I
D
= 30 A, T
J
= 125 °C - - 0.039
V
GS
= 10 V I
D
= 30 A, T
J
= 175 °C - - 0.051
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A - 79 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 5026 6285
pF Output Capacitance C
oss
- 450 565
Reverse Transfer Capacitance C
rss
- 216 270
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 75 V, I
D
= 85 A
-80120
nC Gate-Source Charge
c
Q
gs
-33-
Gate-Drain Charge
c
Q
gd
-12-
Gate Resistance R
g
f = 1 MHz 0.5 1.6 2.6
Turn-On Delay Time
c
t
d(on)
V
DD
= 75 V, R
L
= 0.88
I
D
85 A, V
GEN
= 10 V, R
g
= 1
-1726
ns
Rise Time
c
t
r
-2436
Turn-Off Delay Time
c
t
d(off)
-3553
Fall Time
c
t
f
-1117
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--140A
Forward Voltage V
SD
I
F
= 85 A, V
GS
= 0 V - 0.9 1.5 V
SQM85N15-19
www.vishay.com
Vishay Siliconix
S15-2970-Rev. E, 21-Dec-15
3
Document Number: 68668
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
30
60
90
120
150
180
048121620
V
GS
=10Vthru7V
V
GS
=5V
V
GS
=4V,3V
V
GS
=6V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
30
60
90
120
150
0 1224364860
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
2000
4000
6000
8000
10 000
020406080100
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
0.01
0.02
0.03
0.04
0.05
0 20406080100120
V
GS
=10V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 102030405060708090100
I
D
=85A
V
DS
=75V
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
P1-P3P4-P6P7-P9P10-P11

SQM85N15-19_GE3

Mfr. #:
Buy SQM85N15-19_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 150V 85A 375W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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