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NTLJS4149PTBG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 0
1 Publication Order Number:
NTLJS4149P/D
NTLJS4149P
Power MOSFET
-30 V, -5.9 A, mCoolt Single P-Channel,
2x2 mm, WDFN Package
Features
•WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
•2x2 mm Footprint Same as SC-88 Package
•Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
•This is a Pb-Free Device
Applications
•Li Ion Battery Linear Mode Charging for Portable Power
Management in Noisy Environment
•DC-DC Conversion Buck/Boost Circuits
•High Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain-to-Source Voltage V
DSS
-30 V
Gate-to-Source Voltage V
GS
±12 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
-4.5
A
T
A
= 85°C -3.3
t ≤ 5 s T
A
= 25°C -5.9
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.9
W
t ≤ 5 s 3.2
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
-2.7
A
T
A
= 85°C -2.0
Power Dissipation
(Note 2)
T
A
= 25°C
P
D
0.7 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
-18 A
Operating Junction and Storage Temperature T
J
, T
STG
-55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
-1.5 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
http://onsemi.com
-30 V
75 mW @ -2.5 V
62 mW @ -4.5 V
R
DS(on)
MAXV
(BR)DSS
G
S
P-CHANNEL MOSFET
D
J9 = Specific Device Code
M = Date Code
G = Pb-Free Package
J9MG
G
1
2
3
6
5
4
WDFN6
CASE 506AP
MARKING
DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
NTLJS4149PTAG WDFN6
(Pb-Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
2
3
6
5
4
D
D
G
D
D
S
(Top View)
PIN CONNECTIONS
D
S
S
D
Pin 1
(Note: Microdot may be in either location)
NTLJS4149PTBG WDFN6
(Pb-Free)
3000/Tape & Reel
NTLJS4149P
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction-to-Ambient – Steady State (Note 3)
R
q
JA
65
°C/W
Junction-to-Ambient – t ≤ 5 s (Note 3)
R
q
JA
38
Junction-to-Ambient – Steady State Min Pad (Note 4)
R
q
JA
180
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size.
MOSFET ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= -250 mA
-30 V
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
I
D
= -250 mA, Ref to 25°C
-1.8 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
DS
= -24 V, V
GS
= 0 V
T
J
= 25°C -0.1 -1.0
mA
T
J
= 85°C -1.0 -10
Gate-to-Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±12 V ±0.1
mA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= -250 mA
-0.4 -1.0 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
3.1 mV/°C
Drain-to-Source On-Resistance R
DS(on)
V
GS
= -4.5 V, I
D
= -2.0 A 43 62
mW
V
GS
= -2.5 V, I
D
= -2.0 A 56 75
V
GS
= -4.5 V, I
D
= -4.5 A 43 62
Forward Transconductance g
FS
V
DS
= -6.0 V, I
D
= -3.0 A 10 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= -15 V
960
pF
Output Capacitance C
OSS
130
Reverse Transfer Capacitance C
RSS
80
Total Gate Charge Q
G(TOT)
V
GS
= -4.5 V, V
DS
= -15 V,
I
D
= -2.0 A
9.9 15
nC
Threshold Gate Charge Q
G(TH)
0.8
Gate-to-Source Charge Q
GS
1.45
Gate-to-Drain Charge Q
GD
2.75
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time t
d(ON)
V
GS
= -4.5 V, V
DS
= -15 V,
I
D
= -2.0 A, R
G
= 2.0 W
6.9
ns
Rise Time t
r
11
Turn-Off Delay Time t
d(OFF)
60
Fall Time t
f
55
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= -1.5 A
T
J
= 25°C -0.75 -1.2
V
T
J
= 85°C -0.65
Reverse Recovery Time t
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= -1.5 A
35 60
ns
Charge Time t
a
10
Discharge Time t
b
25
Reverse Recovery Charge Q
RR
0.016
mC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTLJS4149P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
1
0.05
32
0.03
410
1.4
1.6
1.2
0.8
0.6
10000
021
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-I
D
, DRAIN CURRENT (AMPS)
0
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
-I
D
, DRAIN CURRENT (AMPS)
132
0
6
Figure 3. On-Resistance versus
Gate-to-Source Voltage
-V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. On-Resistance versus Drain Current
and Gate Voltage
-I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE (W)
Figure 5. On-Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain-to-Source Leakage Current
versus Voltage
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
-I
DSS
, LEAKAGE (nA)
10
-50 50250-25 75 125100
1
015105
3
2
V
DS
≥ -10 V
T
J
= 25°C
T
J
= -55°C
T
J
= 100°C
V
GS
= 0 V
I
D
= -2.0 A
V
GS
= -4.5 V
4
0.2
T
J
= 100°C
T
J
= 150°C
2
0
10
1.5
T
J
= 25°C
30
V
GS
= -1.9 V to -7 V
-1.7 V
3
1000
4
6
4
0.1
150
100000
2.5
-1.5 V
-1.4 V
-1.2 V
T
J
= 25°C
I
D
= -2.0 A
T
J
= 25°C
0.04
V
GS
= -4.5 V
V
GS
= -2.5 V
20 25
20.5
55
8
5
6
-1.8 V
-1.1 V
8
0.07
0.06
6
100
0.15
0.05
4 789
1.0
-1.6 V
-1.3 V
P1-P3P4-P5

NTLJS4149PTBG

Mfr. #:
Buy NTLJS4149PTBG
Manufacturer:
ON Semiconductor
Description:
MOSFET PFET 2X2 30V 4.6A 60MO
Lifecycle:
New from this manufacturer.
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