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VS-15ETL06-M3

P1-P3P4-P6P7-P7
VS-15ETL06-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
1
Document Number: 96175
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultralow V
F
Hyperfast Rectifier for Discontinuous Mode PFC,
15 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
State of the art, ultralow V
F
, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
0.85 V
t
rr
typ. 60 ns
T
J
max. 175 °C
Package 2L TO-220AC
Circuit configuration Single
2L TO-220AC
1
2
3
Anode
1
3
Cathode
Base
cathode
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Peak repetitive reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 154 °C 15
ANon-repetitive peak surge current I
FSM
T
J
= 25 °C 250
Peak repetitive forward current I
FM
30
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 0.99 1.05
I
F
= 15 A, T
J
= 150 °C - 0.85 0.92
Reverse leakage current I
R
V
R
= V
R
rated - 0.1 10
μA
T
J
= 150 °C, V
R
= V
R
rated - 15 120
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-15ETL06-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
2
Document Number: 96175
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
C
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 60 120
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 190 270
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
- 220 -
T
J
= 125 °C - 320 -
Peak recovery current I
RRM
T
J
= 25 °C - 19 -
A
T
J
= 125 °C - 26 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 2.2 -
μC
T
J
= 125 °C - 4.3 -
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance, junction-to-case R
thJC
-1.01.3
°C/W
Thermal resistance, junction-to-ambient per
leg
R
thJA
Typical socket mount - - 70
Thermal resistance, case-to-heatsink R
thCS
Mounting surface, flat, smooth,
and greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style 2L TO-220AC 15ETL06
100
10
1
0.4 0.6 0.8 1.0 1.2 1.6
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1.4
0 100 200 300 400 500 600
I
R
- Reverse Current (µA)
V
R
- Reverse Voltage (V)
0.001
0.01
0.1
1
10
100
T
J
= 100 °C
T
J
= 175 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 50 °C
T
J
= 75 °C
VS-15ETL06-M3
www.vishay.com
Vishay Semiconductors
Revision: 23-Nov-17
3
Document Number: 96175
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
100
10
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
.
.
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0 5 10 15 20 25
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
130
140
150
160
170
180
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
DC
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
5
10
15
20
25
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
RMS limit
P1-P3P4-P6P7-P7

VS-15ETL06-M3

Mfr. #:
Buy VS-15ETL06-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 15A TO-220 Fred Pt
Lifecycle:
New from this manufacturer.
Delivery:
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