APTGLQ50H65T1G Datasheet APTGLQ50H65T1G | P1-P3

APTGLQ50H65T1G

APTGLQ50H65T1G – Rev 0 August, 2016

www.microsemi.com

1-6

All ratings @ T

j

= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Q3

Q4

1

2

9

Q2

Q1

6

4

11

8

10

12

CR2

CR1

3

7

5

NTC

CR4

CR3

Pins 3/4 must be shorted together

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Voltage 650 V

I

C

Continuous Collector Current

T

C

= 25°C

70

A

T

C

= 60°C

50

I

CM

Pulsed Collector Current T

C

= 25°C 140

V

GE

Gate – Emitter Voltage ±20 V

P

D

Power Dissipation 175 W

Application

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

• Motor control

Features

• High speed Trench + Field Stop IGBT 4 Technology

- Low voltage drop

- Low leakage current

- Low switching losses

• Very low stray inductance

• Internal thermistor for temperature monitoring

Benefits

• Outstanding performance at high frequency operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for easy

PCB mounting

• Low profile

• RoHS compliant

Full bridge

High speed Trench + Field Stop IGBT4

Power Module

V

CES

= 650V

I

C

= 50A @ Tc = 60°C

APTGLQ50H65T1G

APTGLQ50H65T1G – Rev 0 August, 2016

www.microsemi.com

2-6

Electrical Characteristics (per IGBT)

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 650V 50 µA

V

CE(sat)

Collector Emitter Saturation Voltage

V

GE

=15V

I

C

= 50A

T

j

= 25°C

1.4 1.85 2.3

V

T

j

= 150°C

2.2

V

GE

(

th

)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 0.8 mA 4.2 5.1 5.6 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 150 nA

Dynamic Characteristics (per IGBT)

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance V

GE

= 0V

V

CE

= 25V

f = 1MHz

3100

pF

C

oes

Output Capacitance 116

C

res

Reverse Transfer Capacitance 90

Q

G

Gate charge

V

GE

= 15V, I

C

= 50A

V

CE

= 480V

315 nC

T

d(on)

Turn-on Delay Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 400V

I

C

= 50A

R

G

= 7Ω

19

ns

T

r

Rise Time 33

T

d(off)

Turn-off Delay Time 197

T

f

Fall Time 21

T

d(on)

Turn-on Delay Time

Inductive Switching (150°C)

V

GE

= ±15V

V

Bus

= 400V

I

C

= 50A

R

G

= 7Ω

19

ns

T

r

Rise Time 29

T

d(off)

Turn-off Delay Time 227

T

f

Fall Time 22

E

on

Turn on Energy

V

GE

= ±15V

V

Bus

= 400V

I

C

= 50A

R

G

= 7Ω

T

j

= 150°C 1.2

mJ

E

off

Turn off Energy T

j

= 150°C 1

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 400V

t

p

≤5µs ; T

j

= 150°C

350 A

R

thJC

Junction to Case Thermal Resistance 0.85 °C/W

Diode ratings and characteristics (per diode)

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Peak Repetitive Reverse Voltage 650 V

I

RM

Reverse Leakage Current V

R

= 650V 50 µA

I

F

DC Forward Current

Tc = 25°C 50 A

V

F

Diode Forward Voltage

I

F

= 50A

V

GE

= 0V

T

j

= 25°C 1.6 2

V

T

j

= 150°C 1.5

t

rr

Reverse Recovery Time

I

F

= 50A

V

R

= 300V

di/dt =1800A/µs

T

j

= 25°C 100

ns

T

j

= 150°C 150

Q

rr

Reverse Recovery Charge

T

j

= 25°C 2.6

µC

T

j

= 150°C 5.4

E

rr

Reverse Recovery Energy

T

j

= 25°C 0.6

mJ

T

j

= 150°C 1.2

R

thJC

Junction to Case Thermal Resistance 1.42 °C/W

APTGLQ50H65T1G

APTGLQ50H65T1G – Rev 0 August, 2016

www.microsemi.com

3-6

Temperature sensor NTC (see application note APT0406 on www.microsemi.com).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

kΩ

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%

⎥

⎦

⎤

⎢

⎣

⎡

⎟

⎠

⎞

⎜

⎝

⎛

−

=

TT

B

R

T

11

exp

25

85/25

25

Thermal and package characteristics

Symbol Characteristic Min Max Unit

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V

T

J

Operating junction temperature range -40 175

°C

T

JOP

Recommended junction temperature under switching conditions -40 T

J

max -25

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 125

Torque Mounting torque To heatsink M4 2 3 N.

m

Wt Package Weight

80

g

Package outline (dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGLQ50H65T1G

APTGLQ50H65T1G

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