2003 Mar 25 3
NXP Semiconductors Product data sheet
Schottky barrier diode BAT17
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise F
if
= 1.5 dB; f = 35 MHz.
THERMAL CHARACTERISTICS
Note
1. Refer to SOT23 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
forward voltage see Fig.2
I
F
= 0.1 mA 350 mV
I
F
= 1 mA 450 mV
I
F
= 10 mA 600 mV
I
R
reverse current V
R
= 3 V; see Fig.3 0.25 μA
V
R
= 3 V; T
amb
= 60 °C; see Fig.3 1.25 μA
r
D
diode forward resistance f = 1 kHz; I
F
= 5 mA 15 Ω
C
d
diode capacitance f = 1 MHz; V
R
= 0; see Fig.4 1 pF
F noise figure f = 900 MHz; note 1 8 dB
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W