2SAR533PT100

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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Midium Power Transistors (-50V / -3A)
2SAR533P
Structure
Dimensions
(Unit : mm)
PNP Silicon epitaxial planar transistor
Features
1) Low saturation voltage, typically
V
CE (sat)
= -0.4V (Max.) (I
C
/ I
B
=
-1A / -50mA)
2) High speed switching
Applications
Driver
Inner circuit
(Unit : mm)
Package Taping
Code T100
Basic ordering unit (pieces) 1000
2SAR533P
Absolute maximum ratings
(Ta = 25C)
Symbol Limits Unit
Collector-base voltage V
CBO
-50 V
Collector-emitter voltage V
CEO
-50 V
Emitter-base voltage
V
EBO
-6 V
DC I
C
-3 A
Pulsed I
CP
-6 A
P
D
0.5 W
P
D
2W
Junction temperature T
j
150 C
Range of storage temperature T
stg
-55 to 150 C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
Packaging specifications
Type
Parameter
Collector current
Power dissipation
*1
*2
*3
A
bbreviated symbol : MM
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Data Sheet 2SAR533P
Electrical characteristic (Ta = 25C)
Symbol Min. Typ. Max. Unit
Collector-emitter breakdown voltage
BV
CEO
-50 - - V
I
C
= -1mA
Collector-base breakdown voltage
BV
CBO
-50 - - V
I
C
= -100μA
Emitter-base breakdown voltage
BV
EBO
-6 - - V
I
E
= -100μA
Collector cut-off current
I
CBO
---1
A
V
CB
= -50V
Emitter cut-off current
I
EBO
---1
A
V
EB
= -4V
Collector-emitter staturation voltage
V
CE(sat)
- -200 -400 mV
I
C
= -1A, I
B
= -50mA
DC current gain
h
FE
180 - 450 -
V
CE
= -3V, I
C
= -50mA
Turn-on time
t
on
-45-ns
Storage time
t
stg
- 250 - ns
Fall time
t
f
-35-ns
*1 Pulsed
*2 See switching time test circuit
-24Collector output capacitance
C
ob
ConditionsParameter
MHz300 -
V
CE
= -10V
I
E
=500mA, f=100MHz
Transition frequency
f
T
-
pF
V
CB
= -10V, I
E
=0A
f=1MHz
-
I
C
= -1.5A, I
B1
= -150mA,
I
B2
=150mA, V
CC
-10V
*
2
*
2
*
2
~
_
*
1
*
1
3/4
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Data Sheet 2SAR533P
Electrical characteristic curves
I : TNERRUC ROTCELLOC
C
]Am[
COLLECTOR - BASE VOLTAGE : V
CB
[V]
EMITTER - BASE VOLTAGE : V
EB
[V]
)Fp(biC : ECNATICAPAC TUPNI RETTIME
)Fp(boC : ECNATICAPAC TUPTUO ROTCELLOC
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
COLLECTOR CURRENT : I
C
[mA]
V : EGATLOV NOITARUTAS ROTCELLOC
EC
]V[)tas(
COLLECTOR CURRENT : I
C
[mA]
: EGATLOV NOITARUTAS ROTCELLOCV
CE
)[V]tas(
EFh : NIAG TNERRUC CD
EFh : NIAG TNERRUC CD
EMITTER CURRENT : I
E
[mA]
f
T
[MHz] : YCNEUQERF NOITISNART
COLECTOR TO EMITTER VOLTAGE : V
CE
[V]
Fig.6 Ground Emitter Propagation
Characteristics
Fig.1 Typical Output Characteristics
I
C
[A]
: TNERRUC ROTCELLOC
COLLECTOR CURRENT : I
C
[mA]
Fig.2 DC Current Gain vs.
Collector Current ( Ι )
COLLECTOR CURRENT : I
C
[mA]
Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )
Fig.8 Gain Bandwidth Product vs.
Emitter Current
Fig.9 Safe Operating Area
COLLECTOR TO EMITTER VOLTAGE : V
CE
[V]
BASE TO EMITTER VOLTAGE : V
BE
[V]
I
C
: TNERRUC ROTCELLOC [A]
-1
-10
-100
-1000
-10000
0 -0.5 -1 -1.5
1
10
100
1000
-0.1 -1 -10 -100 -0.1 -1 -10 -100
-0.001
-0.01
-0.1
-1
10
100
1000
10
100
1000
-1 -10000-1000-100-10 -1 -10000-1000-100-10
-1 -10000-1000-100-10
-0.001
-0.01
-0.1
-1
-1 -10000-1000-100-10
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
0 -0.5 -1 -1.5 -2
10
100
1000
10 100 1000
-0.01
-0.1
-1
-10
V
CE
= -3V
Cob
Cib
Ta=125°C
75°C
25°C
-40°C
Ta=25°C
V
CE
= -3V
Ta=125°C
75°C
25°C
-40°C
Ta=25°C
V
CE
= -5V
-3V
-2.5mA
-2.0mA
-1.5mA
-1.0mA
-0.5mA
-3.0mA
-5.0mA
-4.0mA
I
C
/I
B
=50
20
10
I
C
/I
B
=20
Ta=125°C
75°C
25°C
-40°C
Ta=25°C
f=1MHz
I
E
=0A
I
C
=0A
Ta=25°C
V
CE
= -10V
100ms
10ms
1ms
Single pulse
DC Ta=25°C
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)

2SAR533PT100

Mfr. #:
Manufacturer:
Description:
Bipolar Transistors - BJT PNP 50V 2A Transistor
Lifecycle:
New from this manufacturer.
Delivery:
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