MMT10B350T3G

© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 2
1 Publication Order Number:
MMT10B350T3/D
MMT10B350T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Features
High Surge Current Capability: 100 Amps 10 x 1000 msec, for
Controlled Temperature Environments
The MMT10B350T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
Surface Mount Technology (SMT)
Indicates UL Recognized − File #E210057
Pb−Free Package is Available
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Off−State Voltage − Maximum V
DM
300 V
Maximum Pulse Surge Short Circuit Current
Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
10 x 1000 msec
−25°C Initial Temperature
2 x 10 msec
10 x 160 msec
10 x 700 msec
I
PPS1
I
PPS2
I
PPS3
I
PPS4
"100
"500
"200
"180
A(pk)
Maximum Non−Repetitive Rate of Change of
On−State Current Double Exponential Waveform,
R = 2.4 W, L = 2.0 mH, C = 2.0 mF, I
pk
= 110 A
di/dt "100
A/ms
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
100 AMP SURGE, 350 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MMT10B350T3 SMB 2500/Tape & Reel
MT1 MT2
(
)
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT10B350T3G SMB
(Pb−Free)
2500/Tape & Reel
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
A = Assembly Location
Y = Year
WW = Work Week
RPDM = Device Code
G = Pb−Free Package
MARKING DIAGRAM
(Note: Microdot may be in either location)
AYWW
RPDM G
G
MMT10B350T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Operating Temperature Range Blocking or Conducting State T
J1
40 to +125 °C
Overload Junction Temperature − Maximum Conducting State Only T
J2
+175 °C
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to
forward and reverse polarities.
Characteristics Symbol
Min Typ Max Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, I
SC
= 1.0 A, Vdc = 1000 V)
(+65°C)
V
(BO)
400
412
V
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
R
I
= 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
V
(BO)
400
412
V
Breakover Voltage Temperature Coefficient dV
(BO)
/dT
J
0.12 V/°C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities V
(BR)
350 V
Off State Current (V
D1
= 50 V) Both polarities
Off State Current (V
D2
= V
DM
) Both polarities
I
D1
I
D2
2.0
5.0
mA
On−State Voltage (I
T
= 1.0 A)
(PW 300 ms, Duty Cycle 2%) (Note 3)
V
T
1.82 5.0 V
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 kW)
Both polarities
I
BO
475 mA
Holding Current (Both polarities) (Note 3)
V
S
= 500 V; I
T
(Initiating Current) = "1.0 A
I
H
150 300 mA
Critical Rate of Rise of Off−State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25°C)
dv/dt 2000
V/ms
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
C
O
40
81
85
pF
3. Measured under pulse conditions to reduce heating.
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)
MMT10B350T3
http://onsemi.com
3
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
I
D1
, OFF−STATE CURRENT (
m
A)
Figure 1. Typical Off−State Current versus
Temperature
TEMPERATURE (°C)
14012010080600−40−60
100
10
1.0
0.1
0.01
Figure 2. Typical Breakdown Voltage versus
Temperature
TEMPERATURE (°C)
V
D1
= 50V
0−60 140
390
380
370
360
350
340
320
400
−40 20
−20 20 40
−20 40 12010060 80
0.001
330
440
430
420
410
400
380
390
CURRENT (A)
I
PP
− PEAK PULSE CURRENT − %I
PP
I
H
, Holding Current (mA)
V
BO
, BREAKOVER VOLTAGE (VOLTS
)
Figure 3. Maximum Breakover Voltage versus
Temperature
Figure 4. Typical Holding Current versus
Temperature
TEMPERATURE (°C)
−40
100
TEMPERATURE (°C)
40060 140
TIME (sec)
10000
0
100010010
420
320
220
Figure 5. Exponential Decay Pulse Waveform Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
−40
20
20 60 12010080
550
500
400
300
200
20 0 20 40 60 80 100 120
TIME (ms)
0
50
0
100
t
r
= rise time to peak value
t
f
= decay time to half value
t
r
t
f
Peak
Value
Half Value
240
260
280
300
380
400
340
360
450
350
250
150
600

MMT10B350T3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Thyristor Surge Protection Devices (TSPD) 100A Surge 400V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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