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MC74VHC1GU04DTT1

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2016
October, 2016 − Rev. 20
1 Publication Order Number:
MC74VHC1GU04/D
MC74VHC1GU04
Single Unbuffered Inverter
The MC74VHC1GU04 is an advanced high speed CMOS
Unbuffered inverter fabricated with silicon gate CMOS technology.
This device consists of a single unbuffered inverter. In combination
with others, or in the MC74VHCU04 Hex Unbuffered Inverter, these
devices are well suited for use as oscillators, pulse shapers, and in
many other applications requiring a high−input impedance amplifier.
For digital applications, the MC74VHC1G04 or the MC74VHC04 are
recommended.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output.
The MC74VHC1GU04 input structure provides protection when
voltages up to 7 V are applied, regardless of the supply voltage. This
allows the MC74VHC1GU04 to be used to interface 5 V circuits to
3 V circuits.
Features
• High Speed: t
PD
= 2.5 ns (Typ) at V
CC
= 5 V
• Low Power Dissipation: I
CC
= 1 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• Chip Complexity: FETs = 105
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
V
CC
NC
IN A
OUT Y
GND
IN A OUT Y
1
Figure 1. Pinout
Figure 2. Logic Symbol
1
2
3
4
5
FUNCTION TABLE
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
L
H
A Input Y Output
H
L
PIN ASSIGNMENT
1
2
3 GND
NC
IN A
4
5V
CC
OUT Y
www.onsemi.com
SC−88A / SOT−353 / SC−70
DF SUFFIX
CASE 419A
TSOP−5 / SOT−23 / SC−59
DT SUFFIX
CASE 483
MARKING
DIAGRAMS
1
5
1
5
1
5
V6 M G
G
V6 = Device Code
M = Date Code*
G = Pb−Free Package
1
5
V6 M G
G
M
*Date Code orientation and/or position may vary
depending upon manufacturing location.
(Note: Microdot may be in either location)
MC74VHC1GU04
www.onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage *0.5 to )7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage *0.5 to V
CC
)0.5 V
I
IK
DC Input Diode Current −20 mA
I
OK
DC Output Diode Current $20 mA
I
OUT
DC Output Sink Current $12.5 mA
I
CC
DC Supply Current per Supply Pin $25 mA
T
STG
Storage Temperature Range *65 to )150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias )150 °C
q
JA
Thermal Resistance SC70−5/SC−88A (Note 1)
TSOP−5
350
230
°C/W
P
D
Power Dissipation in Still Air at 85°C SC70−5/SC−88A
TSOP−5
150
200
mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
2000
200
N/A
V
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5) $100 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range *55 )125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature 5C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
MC74VHC1GU04
www.onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbo
l
Parameter Test Conditions
V
CC
(V)
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Unit
Min Typ Max Min Max Min Max
V
IH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.7
2.4
3.6
4.4
1.7
2.4
3.6
4.4
1.7
2.4
3.6
4.4
V
V
IL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.3
0.6
0.9
1.1
0.3
0.6
0.9
1.1
0.3
0.6
0.9
1.1
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to
5.5
±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 1.0 20 40
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS Input t
r
= t
f
= 3.0 ns
Symbo
l
Parameter Test Conditions
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Maximum Propagation
Delay, Input A to Y
V
CC
= 3.3 ± 0.3 V C
L
= 15 pF
C
L
= 50 pF
3.5
4.8
8.9
11.4
10.5
13.0
12.0
15.5
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15 pF
C
L
= 50 pF
2.5
3.8
5.5
7.0
6.5
8.0
8.0
9.5
C
IN
Maximum Input
Capacitance
4 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 6)
Typical @ 25°C, V
CC
= 5.0V
pF
22
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P6

MC74VHC1GU04DTT1

Mfr. #:
Buy MC74VHC1GU04DTT1
Manufacturer:
ON Semiconductor
Description:
Inverters 2-5.5V CMOS Single
Lifecycle:
New from this manufacturer.
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