OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

FCX658ATA

P1-P3P4-P4
SOT89
SOT89 NPN SILICON PLANAR
MEDIUM POWER HIGH VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 2000
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
*P
tot
=1 Watt
* Optimised h
fe
characterised upto 200mA
APPLICATIONS
* Telephone dialler circuits
* Hook switches for modems
* Predrivers within HID lamp ballasts
* (SLIC) Subscriber Line Interface Cards
Partmarking Detail - 65A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V
CEO
400 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1A
Continuous Collector Current I
C
500 mA
Power Dissipation at T
amb
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
FCX658A
C
B
C
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400 480 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO)
400 465 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
57.8 V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=320V
Collector Cut-Off
Current
I
CES
100 nA V
CE
=320V
Emitter Cut-Off
Current
I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.165
0.125
0.2
V
V
V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA,
I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.75 0.85 V I
C
=100mA,
I
B
=10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.70 0.85 V IC=100mA, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
85
100
55
35
150
170
130
90
I
C
=1mA, V
CE
=5V*
I
C
=10mA, V
CE
=10V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
Transition
Frequency
f
T
50 MHz I
C
=20mA, V
CE
=20V
f=20MHz
Output Capacitance C
obo
10 pF V
CB
=20V, f=1MHz
Switching times t
on
t
off
130
3300
ns
ns
I
C
=100mA, V
C
=100V
I
B1
=10mA,
I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
NB
For high voltage applications the appropriate industry sector PCB guidelines should be
considered with regard to voltage spacing between conductors.
FCX658A
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
1
10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
T
amb
=25°C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
C
E
(
s
a
t
)
-
(
V
o
l
t
s
)
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
V
B
E
(
s
a
t
)
-
(
V
o
l
t
s
)
V
B
E
-
(
V
o
l
t
s
)
I
C
-
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
m
p
s
)
I
C
/I
B
=50
I
C
/I
B
=10
V
CE
=10V
V
CE
=10V
300
200
100
V
CE
- Collector Voltage (Volts)
Safe Operating Area
100110
0.001
0.01
0.1
1.0
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
-55°C
+25°C
+100°C
I
C
/
I
B
=10
0.001
0.001
I
C
/I
B
=20
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.001
1000
-55°C
+25°C
+100°C
I
C
/I
B
=10
h
F
E
-
N
o
r
m
a
l
i
s
e
d
G
a
i
n
h
F
E
-
T
y
p
i
c
a
l
g
a
i
n
FCX658A
P1-P3P4-P4

FCX658ATA

Mfr. #:
Buy FCX658ATA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN 400V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet