HCPL-814-000E Datasheet HCPL-814-000E, HCPL-814-300E, HCPL-814-060E | P4-P6

4

HCPL-814-300E

Solder Reow Temperature Prole

1) One-time soldering reow is recommended within

the condition of temperature and time prole shown

at right.

2) When using another soldering method such as infrared

ray lamp, the temperature may rise partially in the mold

of the device. Keep the temperature on the package of

the device within the condition of (1) above.

30 seconds

60 ~ 150 sec 90 sec 60 sec

60 sec

25°C

150°C

200°C

250°C

260°C (Peak Temperature)

217°C

Time (sec)

Temperature

(

°

C)

Absolute Maximum Ratings

Parameters Symbol Min. Max. Units

Storage Temperature T

S

–55 125 ˚C

Ambient Operating Temperature T

A

–30 100 ˚C

Lead Solder Temperature for 10s T

sol

260 ˚C

(1.6 mm below seating plane)

Average Forward Current I

F

±50 mA

Input Power Dissipation P

I

70 mW

Collector Current I

C

50 mA

Collector-Emitter Voltage V

CEO

35 V

Emitter-Collector Voltage V

ECO

6 V

Collector Power Dissipation P

C

150 mW

Total Power Dissipation P

tot

200 mW

Isolation Voltage V

iso

5000 V

rms

(AC for 1 minute, R.H. = 40 ~ 60%)

[1]

6.5 ± 0.5

(0.256)

DIMENSIONS IN MILLIMETERS AND (INCHES)

4.6 ± 0.5

(0.181)

2.54 ± 0.25

(0.1)

3.5 ± 0.5

(0.138)

7.62 ± 0.3

(0.3)

0.26

(0.010)

10.16 ± 0.3

(0.4)

1.2 ± 0.1

(0.047)

0.35 ± 0.25

(0.014)

1.0 ± 0.25

(0.039)

A 814

Y W W

DATE CODE

RANK

LEAD FREE

ANODE

Note: Non-halide ux should be used.

Figure 1. Forward current vs. temperature. Figure 2. Collector power dissipation vs. tempera-

ture.

Figure 3. Collector-emitter saturation voltage vs.

forward current.

Rank Mark CTR (%) Conditions

A 50 ~ 150 I

F

= ±1 mA,

No Mark 20 ~ 300 V

CE

= 5 V,

T

A

= 25˚C

Notes:

1. Isolation voltage shall be measured using the following method:

(a) Short between anode and cathode on the primary side and between collector and emitter

on the secondary side.

(b) The isolation voltage tester with zero-cross circuit shall be used.

(c) The waveform of applied voltage shall be a sine wave.

2.

CTR = x 100%

I

C

I

F

Electrical Specications (T

A

= 25˚C)

Parameter Symbol Min. Typ. Max. Units Test Conditions

Forward Voltage V

F

– 1.2 1.4 V I

F

= ±20 mA

Terminal Capacitance C

t

– 50 250 pF V = 0, f = 1 kHz

Collector Dark Current I

CEO

– – 100 nA V

CE

= 20 V, I

F

= 0

Collector-Emitter Breakdown Voltage BV

CEO

35 – – V I

C

= 0.1 mA, I

F

= 0

Emitter-Collector Breakdown Voltage BV

ECO

6 – – V I

E

= 10 µA, I

F

= 0

Collector Current I

C

0.2 – 3 mA I

F

= ±1 mA,

Current Transfer Ratio

[2]

CTR 20 – 300 % V

CE

= 5 V

Collector-Emitter Saturation Voltage V

CE(sat)

– 0.1 0.2 V I

F

= ±20 mA, I

C

= 1 mA

Isolation Resistance R

iso

5 x 10

10

1 x 10

11

– Ω DC 500 V

40 ~ 60% R.H.

Floating Capacitance C

f

– 0.6 1 pF V = 0, f = 1 MHz

Cut-o Frequency f

c

15 80 – kHz V

CE

= 5 V, I

C

= 2 mA

R

L

= 100 Ω, –3 dB

Response Time (Rise) t

r

– 4 18 µs V

CE

= 2 V, I

C

= 2 mA,

Response Time (Fall) t

f

– 3 18 µs R

L

= 100 Ω

0

I

F

– FORWARD CURRENT – mA

10.0 15.0

2

5.00

HCPL-354 fig 3

1

3

4

5

6

V

CE(SAT.)

– COLLECTOR-EMITTER

SATURATION VOLTAGE – V

T

A

= 25°C

I

C

= 0.5 mA

I

C

= 1 mA

I

C

= 3 mA

I

C

= 5 mA

I

C

= 7 mA

2.5 7.5 12.5

I

F

– FORWARD CURRENT – mA

0

T

A

– AMBIENT TEMPERATURE – °C

75 125

50

25

10

40

0 50 100-30

60

HCPL-814 fig 1

30

20

P

C

– COLLECTOR POWER DISSIPATION – mW

0

T

A

– AMBIENT TEMPERATURE – °C

100

50

200

150

HCPL-814 fig 2

75 125250 50 100-30

6

I

F

– FORWARD CURRENT – mA

1

V

F

– FORWARD VOLTAGE – V

2.0 3.0

10

5

500

1.00

HCPL-354 fig 4

T

A

= 75°C

0.5 1.5 2.5

2

20

50

100

200

T

A

= 50°C

T

A

= 25°C

T

A

= 0°C

T

A

= -25°C

Figure 4. Forward current vs. forward voltage.

Figure 5. Current transfer ratio vs. forward current. Figure 6. Collector current vs. collector-emitter volt-

age.

Figure 7. Relative current transfer ratio vs. tempera-

ture.

Figure 8. Collector-emitter saturation voltage vs.

temperature.

Figure 9. Collector dark current vs. temperature.

0

I

F

– FORWARD CURRENT – mA

10 100

40

0.20.1

HCPL-814 fig 5

20

60

120

140

CTR – CURRENT TRANSFER RATIO – %

80

100

0.5 201 5052

V

CE

= 5 V

T

A

= 25°C

I

C

– COLLECTOR CURRENT – mA

0

V

CE

– COLLECTOR-EMITTER VOLTAGE – V

6 10

40

20

50

30

HCPL-814 fig 6

P

C

(MAX.)

T

A

= 25°C

I

F

= 30 mA

I

F

= 20 mA

I

F

= 5 mA

30

10

1 2 4 5 7 8 9

I

F

= 1 mA

I

F

= 10 mA

V

CE(SAT.)

– COLLECTOR-EMITTER

SATURATION VOLTAGE – V

0

0.10

0.02

HCPL-814 fig 8

I

C

= 1 mA

I

F

= 20 mA

T

A

– AMBIENT TEMPERATURE – °C

8040-30 60 100

0.04

0.06

0.08

200

I

CEO

– COLLECTOR DARK CURRENT – A

HCPL-814 fig 9

T

A

– AMBIENT TEMPERATURE – °C

10

-12

10

-11

10

-10

10

-9

10

-8

10

-7

80400 60 100-30

10

-6

20

RELATIVE CURRENT TRANSFER RATIO – %

0

100

50

150

HCPL-814 fig 7

V

CE

= 5 V

I

F

= 5 mA

T

A

– AMBIENT TEMPERATURE – °C

75250 50 100-30

Figure 10. Response time vs. load resistance.

Figure 11. Frequency response.

RESPONSE TIME – µs

0.1

R

L

– LOAD RESISTANCE – kΩ

0.1 5

1

0.5

0.2

0.5

0.2 2 10

2

HCPL-814 fig 10

1

5

10

20

50

100

V

CE

= 2 V

I

C

= 2 mA

T

A

= 25°C

t

f

t

r

t

s

t

d

VOLTAGE GAIN AV – dB

f – FREQUENCY – kHz

0.5 102

-20

-10

1 50.2

0

HCPL-814 fig 11

100

R

L

= 10 kΩ

R

L

= 1 kΩ

R

L

= 100 Ω

1000

V

CE

= 2 V

I

C

= 2 mA

T

A

= 25°C

HCPL-814-000E

HCPL-814-000E

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