BFS 469L6 E6327

Sep-01-2003

1

BFS469L6

1

2

3

4

5

6

NPN Silicon RF TWIN Transistor

Preliminary data

• Low voltage/ low current applications

• Ideal for VCO modules and low noise amplifiers

• Low noise figure: TR1: 1.1dB at 1.8 GHz

TR2: 1.5 dB at 1.8 GHz

• World's smallest SMD 6-pin leadless package

• Built in 2 transitors (TR1: die as BFR460L3,

TR2: die as BFR949L3)

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ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFS469L6 AD

1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

TR1

TR2

V

CEO

4.5

10

V

Collector-emitter voltage

TR1

TR2

V

CES

15

20

Collector-base voltage

TR1

TR2

V

CBO

15

20

Emitter-base voltage

TR1

TR2

V

EBO

1.5

1.5

Collector current

TR1

TR2

I

C

50

70

mA

Sep-01-2003

2

BFS469L6

Maximum Ratings

Parameter

Symbol Value Unit

Base current

TR1

TR2

I

B

5

7

mA

Total power dissipation

1)

TR1,

T

S

≤ 104°C

TR2,

T

S

≤ 100°C

P

tot

200

250

mW

Junction temperature

TR1

TR2

T

j

150

150

°C

Ambient temperature

TR1

TR2

T

A

-65 ... 150

-65 ... 150

Storage temperature

TR1

TR2

T

stg

-65 ... 150

-65 ... 150

Thermal Resistance

Parameter

Symbol Value Unit

Junction - soldering point

2)

TR1

TR2

R

thJS

≤ 230

≤ 200

K/W

1

T

S

is measured on the collector lead at the soldering point to the pcb

2

For calculation of R

thJA

please refer to Application Note Thermal Resistance

Sep-01-2003

3

BFS469L6

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

TR1, I

C

= 1 mA, I

B

= 0

TR2, I

C

= 1 mA, I

B

= 0

V

(BR)CEO

4.5

10

5

-

-

-

V

Collector-emitter cutoff current

TR1, V

CE

= 15 V , V

BE

= 0

TR1, V

CE

= 20 V, V

BE

= 0

I

CES

-

-

-

-

10

10

µA

Collector-base cutoff current

TR1, V

CB

= 5 V, I

E

= 0

TR2, V

CB

= 10 V, I

E

= 0

I

CBO

-

-

-

-

100

100

nA

Emitter-base cutoff current

TR1, V

EB

= 0,5 V, I

C

= 0

TR2, V

EB

= 1 V, I

C

= 0

I

EBO

-

-

-

-

1

0.1

µA

DC current gain-

TR1, I

C

= 20 mA, V

CE

= 3 V

TR2, I

C

= 5 mA, V

CE

= 3 V

h

FE

-

100

130

140

-

200

-

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

TR1,

I

C

= 30 mA, V

CE

= 3 V, f = 1 GHz

TR2,

I

C

= 15 mA, V

CE

= 6 V, f = 1 GHz

f

T

16

tbd

22

9

-

-

GHz

Collector-base capacitance

TR1,

V

CB

= 3 V, f = 1 MHz, emitter grounded

TR2,

V

CB

= 10 V, f = 1 MHz, emitter grounded

C

cb

-

-

0.33

0.3

0.5

0.45

pF

Collector emitter capacitance

TR1,

V

CE

= 3 V, f = 1 MHz, base grounded

TR1,

V

CE

= 10 V, f = 1 MHz, base grounded

C

ce

-

-

0.17

0.17

-

-

Emitter-base capacitance

TR1,

V

EB

= 0,5 V, f = 1 MHz, collector grounded

TR2,

V

EB

= 0,5 V, f = 1 MHz, collector grounded

C

eb

-

-

0.57

0.75

-

-

BFS 469L6 E6327

Mfr. #:

Buy BFS 469L6 E6327

Manufacturer:

Infineon Technologies

Description:

RF TRANS 2 NPN 5V/10V 9GHZ TSLP

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BFS 469L6 E6327