L9903
4/17
Table 5.
Electrical Characteristcs
(8V < V
VS
< 20V, V
EN
= HIGH, -40°C
T
J
150°C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol Parameter Test Condition Min. Typ. Max. Unit
Supply (VS)
V
VS OVH
Overvoltage disable HIGH
threshold
20 22 24 V
V
VS OVh
Overvoltage threshold hysteresis
2)
1.6 V
V
VS UVH
Undervoltage disable HIGH
threshold
67V
V
VS UVh
Undervoltage threshold
hysteresis
2)
0.66 V
I
VSL
Supply current V
EN
= 0 ; V
VS
= 13.5V; T
J
< 85°C 50 µA
I
VSH
Supply current, pwm-mode V
VS
= 13.5V; V
EN
= HIGH;
V
DIR
= LOW; S1 = S2 = GND
f
PWM
= 20kHz; C
CBX
= 0.1µF;
C
GLX
= 4.7nF; C
GHX
= 4.7nF;
R
PR
= 10k; C
PR
= 150pF
8.1 13 mA
I
VSD
Supply current, dc-mode V
VS
= 13.5V; V
EN
= HIGH;
V
DIR
= LOW; S1 = S2 = GND
V
PWM
= LOW; C
GHX
= 4.7nF
R
PR
= 10k; C
PR
= 150pF
5.8 10 mA
Enable input (EN)
V
ENL
Low level 1.5 V
V
ENH
High level 3.5 V
V
ENh
Hysteresis threshold
2)
1V
R
EN
Input pull down resistance V
EN
= 5V 16 50 100 k
H-bridge control inputs (DIR, PWM)
V
DIRL
V
PWML
Input low level 1.5 V
V
DIRH
V
PWMH
Input high level 3.5 V
V
DIRh
V
PWMh
Input threshold hysteresis
2)
1V
R
DIR
R
PWM
Internal pull up resistance
to internal VCC
3)
V
DIR
= 0; V
PWM
= 0 16 50 100 k
DIAGNOSTIC output (DG)
V
DG
Output drop I
DG
= 1mA 0.6 V
R
DG
Internal pull up resistance
to internal VCC
3)
V
DG
= 0V 10 20 40 k
Programmable cross conduction protection
4)
N
PR
Threshold voltage ratio V
PRH
/
V
PRL
R
PR
= 10k
1.822.2
I
PR
Current capability
V
PR
= 2V
-0.5 mA
ISO interface, transmission input (TX)
V
TXL
Input low level 1.5 V
5/17
L9903
V
TXH
Input high level 3.5 V
V
TXh
Input hysteresis voltage 2) 1 V
R
TX
Internal pull up resistance to
internal VCC 3)
V
TX
= 0 10 20 40 k
ISO interface, receiver output (RX)
V
RXL
Output voltage high stage
TX = HIGH; I
RX
= 0; V
K
= V
VS
4.5 5.5 V
R
RX
Internal pull up resistance
to internal VCC
3)
TX = HIGH;
V
RX
= 0V
51020k
R
RXON
ON resistance to ground TX = LOW;
I
RX
= 1mA
40 90
t
RXH
Output high delay time Fig. 1 0.5 µs
t
RXL
Output low delay time 0.5 µs
ISO interface, K-line (K)
V
KL
Input low level -20V 0.45 ·
V
VS
V
KH
Input high level 0.55 ·
V
VS
V
VS
V
Kh
Input hysteresis voltage 2) 0.025·
V
VS
0.8V
I
KH
Input current V
TX
= HIGH -5 25 µA
R
KON
ON resistance to ground V
TX
= LOW; I
K
=10mA 10 30
I
KSC
Short circuit current V
TX
= LOW 40 130 mA
f
K
Transmission frequency 60 100 kHz
2. not tested in production: guaranteed by design and verified in characterization
3. Internal V
VCC
is 4.5V ... 5.5V
4. see page 18 for calculation of programmable cross conduction protection time
t
Kr
Rise time V
VS
= 13.5V; Fig. 1
External loads at K-line:
R
K
= 510 pull up
to V
VS
C
K
= 2.2nF to GND
26µs
t
Kf
Fall time 26µs
t
KH
Switch high delay time 4 17 µs
t
KL
Switch low delay time 4 17 µs
t
SH
Short circuit detection time V
VS
= 13.5V;
TX = LOW
V
K
> 0.55 · V
VS
10 40 µs
Charge pump
V
CP
Charge pump voltage V
VS
= 8V
V
VS
= 13.5V
V
VS
= 20V
V
VS
+7V
V
VS
+10V
V
VS
+10V
V
VS
+14V
V
VS
+14V
V
VS
+14V
Table 5.
Electrical Characteristcs
(continued)
(8V < V
VS
< 20V, V
EN
= HIGH, -40°C
T
J
150°C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol Parameter Test Condition Min. Typ. Max. Unit
L9903
6/17
I
CP
Charging current
V
CP
= V
VS
+ 8V
V
VS
= 13.5V -50 -75 µA
t
CP
Charging time
2)
V
CP
= V
VS
+ 8V
V
VS
= 13.5V
C
CP
= 10nF
1.2 4 ms
f
CP
Charge pump frequency V
VS
= 13.5V 250 500 750 kHz
Drivers for external highside power MOS
V
CB1
V
CB2
Bootstrap voltage V
VS
= 8V; I
CBX
= 0; V
SX
= 0
V
VS
=13.5V; I
CBX
= 0; V
SX
= 0
V
VS
= 20V; I
CBX
= 0; V
SX
= 0
7.5
10
10
14
14
14
V
V
V
R
GH1L
R
GH2L
ON-resistance of SINK stage
V
CBX
= 8V; V
SX
= 0
I
GHX
= 50mA; T
J
= 25°C
10
V
CBX
= 8V; V
SX
= 0
I
GHX
= 50mA; T
J
= 125°C
20
R
GH1H
R
GH2H
ON-resistance of SOURCE stage I
GHX
= -50mA; T
J
= 25°C
I
GHX
= -50mA; T
J
= 125°C
10
20
V
GH1H
V
GH2H
Gate ON voltage (SOURCE) V
VS
= V
SX
= 8V; I
GHX
= 0;
C
CBX
= 0.1µF
V
VS
+6.5V
V
VS
+14V
V
VS
= V
SX
= 13.5V; I
GHX
= 0;
C
CBX
= 0.1µF
V
VS
+10V
V
VS
+14V
V
VS
= V
SX
= 20V; I
GHX
= 0;
C
CBX
= 0.1µF
V
VS
+10V
V
VS
+14V
R
GH1
R
GH2
Gate discharge resistance EN = LOW 10 100 k
R
S1
R
S2
Sink resistance 10 100 k
Drivers for external lowside power MOS
R
GL1L
R
GL2L
ON-resistance of SINK stage I
GLX
= 50mA; T
J
= 25°C
I
GLX
= 50mA; T
J
= 125°C
10
20
R
GL1H,
R
GL2H
ON-resistance of SOURCE stage I
GLX
= -50mA; T
J
= 25°C
I
GLX
= -50mA; T
J
= 125°C
10
20
V
GL1H,
V
GL2H
Gate ON voltage (SOURCE) V
VS
= 8V; I
GLX
= 0
V
VS
= 13.5V; I
GLX
= 0
V
VS
= 20V; I
GLX
= 0
7V
10V
10V
V
VS
V
VS
14V
R
GL1
R
GL2
Gate discharge resistance EN = LOW 10 100 k
2. not tested in production: guaranteed by design and verified in characterization
Timing of the drivers
t
GH1LH
t
GH2LH
Propagation delay time Fig. 2
V
VS
= 13.5V
V
S1
= V
S2
=0
C
CBX
= 0.1µF
RPR= 10kW
500 ns
Table 5.
Electrical Characteristcs
(continued)
(8V < V
VS
< 20V, V
EN
= HIGH, -40°C
T
J
150°C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol Parameter Test Condition Min. Typ. Max. Unit

L9903

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Motor / Motion / Ignition Controllers & Drivers Motor Bridge
Lifecycle:
New from this manufacturer.
Delivery:
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