BAV19WS RRG

BAV19WS/BAV20WS/BAV21WS

Taiwan Semiconductor

1

Version: I1804

200mA, 120-250V High Voltage SMD Switching Diode

FEATURES

● Low power loss, high efficiency

● Ideal for automated placement

● High surge current capability

● Moisture sensitivity level: level 1, per J-STD-020

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● Lighting application

● On-board DC/DC converter

MECHANICAL DATA

● Case: SOD-323F

● Molding compound meets UL 94 V-0 flammability rating

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

● Weight: 4.5 ± 0.5 mg (approximately)

KEY PARAMETERS

PARAMETER VALUE UNIT

I

F(AV)

200 mA

V

RRM

120-250 V

I

FSM

2.5 A

V

F

at I

F

=200mA 1.25 V

T

J

MAX. 150 °C

Package SOD-323F

Configuration Single die

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise noted)

PARAMETER

SYMBOL

BAV19WS

BAV20WS

BAV21WS

UNIT

Marking code on the device S5 S6 S7

Power dissipation

P

D

200 mW

Average forward current

I

F

200 mA

Repetitive peak reverse voltage V

RRM

120 200 250 V

Peak forward surge

current

Pulse Width = 1 s ,

Square Wave

I

FSM

0.5

A

Pulse Width = 1 μs ,

Square Wave

2.5

Junction temperature range T

J

-65 to +150 °C

Storage temperature range T

STG

-65 to +150 °C

BAV19WS/BAV20WS/BAV21WS

Taiwan Semiconductor

2

Version: I1804

ELECTRICAL SPECIFICATIONS

(T

A

= 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL MIN MAX UNIT

Forward voltage per diode

(1)

I

F

= 100mA, T

J

= 25°C

V

F

- 1.00

V

I

F

= 200mA, T

J

= 25°C

- 1.25

Reverse voltage

BAV19WS

I

R

=100µA, T

J

= 25°C V

R

120 -

V

BAV20WS

200 -

BAV21WS

250 -

Reverse current

(2)

BAV19WS

V

R

=100V T

J

= 25°C

I

R

-

100

nA BAV20WS

V

R

=150V T

J

= 25°C

BAV21WS

V

R

=200V T

J

= 25°C

Junction capacitance

1 MHz, V

R

=0V

C

J

-

5

pF

Reverse recovery time

I

F

=I

R

=30mA, R

L

=100Ω,

I

RR

=3mA

t

rr

-

50

ns

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms

ORDERING

INFORMATION

PART NO.

PACKAGE PACKING

BAV19WS RRG SOD-323F 3K / 7" Reel

BAV19WS RR SOD-323F

3K / 7" Reel

BAV19WS R9G SOD-323F 10K / 13" Reel

BAV19WS R9 SOD-323F

10K / 13" Reel

BAV20WS RRG SOD-323F

3K / 7" Reel

BAV20WS RR SOD-323F

3K / 7" Reel

BAV20WS R9G SOD-323F 10K / 13" Reel

BAV20WS R9 SOD-323F

10K / 13" Reel

BAV21WS RRG SOD-323F

3K / 7" Reel

BAV21WS RR SOD-323F

3K / 7" Reel

BAV21WS R9G SOD-323F 10K / 13" Reel

BAV21WS R9 SOD-323F

10K / 13" Reel

BAV19WS/BAV20WS/BAV21WS

Taiwan Semiconductor

3

Version: I1804

CHARACTERISTICS CURVES

(T

A

= 25°C unless otherwise noted)

Fig.1

Typical Forward Characteristics

Fig.2

Typical Reverse Characteristics

Fig.3

Typical Capacitance VS. Reverse Voltage

Fig.3

Power Derating Curve

0.001

0.01

0.1

1

0 0.2 0.4 0.6 0.8 1 1.2 1.4

T

A

=150

o

C

T

A

=125

o

C

T

A

=75

o

C

T

A

=25

o

C

T

A

=0

o

C

T

A

=-40

o

C

0.0001

0.001

0.01

0.1

1

10

100

0 50 100 150 200 250

T

A

=75

o

C

T

A

=25

o

C

T

A

=0

o

C

T

A

=-40

o

C

T

A

=125

o

C

T

A

=150

o

C

0.0

1.0

2.0

3.0

4.0

0 10 20 30 40

f=1.0MHz

0

50

100

150

200

250

0 50 100 150 200

I

R

, Instantaneous Reverse Current (μA)

V

F

, Instantaneous Forward Voltage (V)

P

D

, Power Dissipation (mW)

V

R

, Reverse Voltage (V)

V

R

, Instantaneous Reverse Voltage (V)

I

F

,Instantaneous Forward Current (A)

T

A

, ambient Temperature (

o

C)

C

T

, Total Capacitance (pF)

BAV19WS RRG

Mfr. #:

Buy BAV19WS RRG

Manufacturer:

Taiwan Semiconductor

Description:

Diodes - General Purpose, Power, Switching Switching diode 200mW

Lifecycle:

New from this manufacturer.

Delivery:

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