IRFR/U3708
2 www.irf.com
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol Parameter Typ. Max. Units
E
AS
Single Pulse Avalanche Energy ––– 213 mJ
I
AR
Avalanche Current ––– 62 A
Avalanche Characteristics
S
D
G
Diode Characteristics
61
244
A
Symbol Parameter Min. Typ. Max. Units Conditions
g
fs
Forward Transconductance 49 ––– ––– SV
DS
= 15V, I
D
= 50A
Q
g
Total Gate Charge ––– 24 ––– I
D
= 24.8A
Q
gs
Gate-to-Source Charge ––– 6.7 ––– nC V
DS
= 15V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 5.8 ––– V
GS
= 4.5V
Q
oss
Output Gate Charge ––– 14 21 V
GS
= 0V, I
D
= 24.8A, V
DS
= 15V
t
d(on)
Turn-On Delay Time ––– 7.2 ––– V
DD
= 15V
t
r
Rise Time ––– 50 ––– I
D
= 24.8A
t
d(off)
Turn-Off Delay Time ––– 17.6 ––– R
G
= 0.6Ω
t
f
Fall Time ––– 3.7 ––– V
GS
= 4.5V
C
iss
Input Capacitance ––– 2417 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 707 ––– V
DS
= 15V
C
rss
Reverse Transfer Capacitance ––– 52 ––– pF ƒ = 1.0MHz
V
SD
Diode Forward Voltage
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
––– 0.88 1.3 V T
J
= 25°C, I
S
= 31A, V
GS
= 0V
––– 0.80 ––– T
J
= 125°C, I
S
= 31A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 41 62 ns T
J
= 25°C, I
F
= 31A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 64 96 nC di/dt = 100A/µs
t
rr
Reverse Recovery Time ––– 43 65 ns T
J
= 125°C, I
F
= 31A, V
R
=20V
Q
rr
Reverse Recovery Charge ––– 70 105 nC di/dt = 100A/µs
Static @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– VV
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
––– 0.028 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 8.5 12.5 V
GS
= 10V, I
D
= 15A
––– 10.0 14.0 mΩ V
GS
= 4.5V, I
D
= 12A
––– 15.0 30.0 V
GS
= 2.8V, I
D
= 7.5A
V
GS(th)
Gate Threshold Voltage 0.6 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
µA
V
DS
= 24V, V
GS
= 0V
––– ––– 100 V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage ––– ––– 200 V
GS
= 12V
Gate-to-Source Reverse Leakage ––– ––– -200
nA
V
GS
= -12V
