OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

CRD5AS-12B#B00

P1-P3P4-P6
R07DS0503EJ0100 Rev.1.00 Page 1 of 5
Jul 07, 2011
Preliminary Datasheet
CRD5AS-12B
Reverse Conducting Thyristor
Medium Power Use
Features
I
T (AV)
: 5 A
V
DRM
: 600 V
I
GT
: 100 A
The Product guaranteed maximum junction
temperature 150C
Built-in reverse conducting diode
Planar Type
Outline
2, 4
RENESAS Package code: PRSS0004ZG-A
(Package name: MP-3A)
1
3
1. Cathode
2. Anode
3. Gate
4. Anode
1
3
2
4
Applications
Switching mode power supply, Regulator for motorcycle
Maximum Ratings
Voltage class
Parameter Symbol
12
Unit
Repetitive peak off-state voltage
Note1
V
DRM
600 V
Notes: 1. With gate to cathode resistance R
GK
=220
Parameter Symbol Ratings Unit Conditions
RMS on-state current I
T(RMS)
7.8 A
Average on-state current I
T(AV)
5 A
Commercial frequency, sine half wave
180 conduction, Tc=113C
Surge on-state current I
TSM
90 A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
I
2
t for fusing I
2
t 33 A
2
s
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Surge reverse-conducting current I
RCSM
3 A
sine half wave, pulse width 10ms
peak value, non-repetitive, R
GK
=0
Peak gate power dissipation P
GM
0.5 W
Average gate power dissipation P
G(AV)
0.1 W
Peak gate forward voltage V
FGM
6 V
Peak gate reverse voltage V
RGM
6 V
Peak gate forward current I
FGM
0.3 A
Junction temperature Tj – 40 to +150 C
Storage temperature Tstg – 40 to +150 C
Mass — 0.26 g Typical value
R07DS0503EJ0100
Rev.1.00
Jul 07, 2011
CRD5AS-12B Preliminary
R07DS0503EJ0100 Rev.1.00 Page 2 of 5
Jul 07, 2011
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current I
DRM
— — 2.0 mA
Tj = 150C, V
DRM
applied
R
GK
=220Ω
On-state voltage V
TM
— — 1.8 V
Tj = 25C, I
TM
= 15 A
instantaneous value
Gate trigger voltage V
GT
— — 0.8 V Tj = 25C, V
D
= 6 V, I
T
= 0.1 A
Gate non-trigger voltage V
GD
0.1 — — V
Tj = 150C, V
D
= 1/2 V
DRM
R
GK
=220Ω
Gate trigger current I
GT
1 — 100 A Tj = 25C, V
D
= 6 V, I
T
= 0.1 A
Holding current I
H
— 3 — mA
Tj = 25°C, V
D
= 12 V
R
GK
=220Ω
Thermal resistance R
th(j-c)
— — 3.0 C/W Junction to case
Note2
Notes: 2. The measurement point for case temperature is at anode tab.
CRD5AS-12B Preliminary
R07DS0503EJ0100 Rev.1.00 Page 3 of 5
Jul 07, 2011
Performance Curves
10
3
10
2
10
1
10
0
–40 0 40 80 120 160
Typical Example
Maximum On-State Characteristics
On-State Current (A)
On-State Voltage (V)
Rated Surge On-State Current
Surge On-State Current (A)
Conduction Time (Cycles at 60Hz)
40
20
60
80
100
0
3.80.6 1.4 2.2 3.01.0 1.8 2.6
3.4
Gate Voltage (V)
Gate Current (mA)
Gate Trigger Current vs.
Junction Temperature
Junction Temperature (°C)
Gate Characteristics
×
100 (%)
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Transient Thermal Impedance (°C/W)
Time (s)
Gate Trigger Voltage vs.
Junction Temperature
Gate Trigger Voltage (V)
Junction Temperature (°C)
Junction to ambient
Junction to case
Tc = 25°C
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 100µA
(T
j
= 25°C)
P
GM
= 0.5W
V
D
= 6V
R
L
= 60Ω
P
G(AV)
= 0.1W
V
GD
= 0.1V
I
FGM
= 0.3A
10
2
10
1
10
0
10
0
10
−2
10
−1
10
0
10
−2
10
−3
10
−1
10
0
10
0
10
1
10
2
10
3
10
1
10
2
10
2
10
1
10
0
10
2
10
3
10
1
10
0
10
−1
10
1
10
2
10
−1
Typical Distribution
Typical Example
1.0
0.8
0.6
0.4
0.2
0
–40 0 40 80 120 160
V
D
= 6V
R
L
= 60Ω
P1-P3P4-P6

CRD5AS-12B#B00

Mfr. #:
Buy CRD5AS-12B#B00
Manufacturer:
Renesas Electronics
Description:
SCRs Thyristor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet