OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IRF5805TR

P1-P3P4-P6P7-P9
IRF5805
4 www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 2 4 6 8 10 12 14
0
4
8
12
16
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-3.8A
V =-15V
DS
V =-24V
DS
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
V
DS
, Drain-to-Source Voltage (V)
0
200
400
600
800
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
IRF5805
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
V
DS
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
J DM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF5805
6 www.irf.com
Fig 13. Typical On-Resistance Vs.
Drain Current
Fig 12. Typical On-Resistance Vs.
Gate Voltage
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
-V
GS,
Gate -to -Source Voltage (V)
0.050
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= -3.8A
0 5 10 15 20
-I
D
, Drain Current ( A )
0.000
0.100
0.200
0.300
0.400
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
VGS = -4.5V
VGS = -10V
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
P1-P3P4-P6P7-P9

IRF5805TR

Mfr. #:
Buy IRF5805TR
Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 3.8A 6-TSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet