AOC2417
Symbol Min Typ Max Units
BV
DSS
-20 V
V
DS
=-20V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±10 µA
V
GS(th)
Gate Threshold Voltage
-0.6 -0.98 -1.4 V
26 32
T
J
=125°C 36 44
29 38 mΩ
37 50 mΩ
g
FS
12 S
V
SD
-0.68 -1 V
C
iss
1355 pF
C
oss
225 pF
C
rss
150 pF
R
g
15 Ω
Q
g(10V)
28 40 nC
Q
g(4.5V)
14 20 nC
Q
gs
2.5 nC
Q
gd
4 nC
t
D(on)
7 ns
t
r
6 ns
t
D(off)
190 ns
t
f
60 ns
t
rr
20 ns
Q
rr
6
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, I
D
=-1.5A
Reverse Transfer Capacitance
I
F
=-1.5A, dI/dt=100A/µs
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
=±12V
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-1.5A
V
GS
=-4.5V, I
D
=-1A
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=-10V, V
DS
=-10V, I
D
=-1.5A
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-10V,
R
L
=6.67Ω, R
GEN
=3Ω
Gate resistance
V
GS
=-2.5V, I
D
=-1A
Total Gate Charge
Body Diode Reverse Recovery Charge
I
F
=-1.5A, dI/dt=100A/µs
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
Rev.1.0 : December 2013 www.aosmd.com Page 2 of 6
