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HIVE INF
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ARCHIVE INFORMATION
MHW10276N
1
RF Device Data
Freescale Semiconductor
Gallium Arsenide
CATV Amplifier Module
Features
• 79-, 112- and 132-Channel Loading
• Excellent Distortion Performance
• Integrated ESD Protection Diodes
• GaAs FET Transistor Technology
• Unconditionally Stable Under All Load Conditions
Applications
• CATV Systems Operating in the 40 to 1000 MHz Frequency Range
• Input Stage Amplifier in Optical Nodes, Line Extenders and Trunk
Distribution Amplifiers for CATV Systems
• Driver Amplifier in Linear General Purpose Applications
Description
• 24 Vdc Supply, 40 to 1000 MHz, CATV GaAs Forward Amplifier Module
• RoHS Compliant
Table 1. Maximum Ratings
Rating Symbol Value Unit
RF Voltage Input (Single Tone) V
in
+65 dBmV
DC Supply Voltage V
CC
+26 Vdc
Operating Case Temperature Range T
C
-20 to +100 °C
Storage Temperature Range T
stg
-40 to +100 °C
Table 2. ESD Maximum Ratings
Rating Input Value Output Value Unit
Surge Voltage per IEC 1000-4-5 200 200 V
Human Body Model per Mil. Std. 1686 2 2 kV
Table 3. Electrical Characteristics (V
CC
= 24 Vdc, T
C
= +30°C, 75 Ω system unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Frequency Range BW 40 — 1000 MHz
Power Gain 1000 MHz G
p
27 27.8 28.5 dB
Slope 50-1000 MHz S 0.3 0.9 1.45 dB
Gain Flatness (40-995 MHz, Peak- to -Valley) G
F
— — 0.8 dB
Document Number: MHW10276N
Rev. 0, 7/2006
Freescale Semiconductor
Technical Data
MHW10276N
1000 MHz
27.8 dB GAIN
132-CHANNEL
GaAs CATV AMPLIFIER MODULE
CASE 1302-01, STYLE 1
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
