C106M1

© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 10
1 Publication Order Number:
C106/D
C106 Series
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Features
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
Sensitive Gate Triggering
These are PbFree Devices
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Max Unit
Peak Repetitive OffState Voltage (Note 1)
(Sine Wave, 5060 Hz, R
GK
= 1 kW,
T
C
= 40° to 110°C)
C106B
C106D, C106D1*
C106M, C106M1*
V
DRM,
V
RRM
200
400
600
V
On-State RMS Current
(180° Conduction Angles, T
C
= 80°C)
I
T(RMS)
4.0 A
Average OnState Current
(180° Conduction Angles, T
C
= 80°C)
I
T(AV)
2.55 A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= +25°C)
I
TSM
20 A
Circuit Fusing Considerations (t = 8.3 ms) I
2
t 1.65 A
2
s
Forward Peak Gate Power
(Pulse Width v1.0 msec, T
C
= 80°C)
P
GM
0.5 W
Forward Average Gate Power
(Pulse Width v1.0 msec, T
C
= 80°C)
P
G(AV)
0.1 W
Forward Peak Gate Current
(Pulse Width v1.0 msec, T
C
= 80°C)
I
GM
0.2 A
Operating Junction Temperature Range T
J
40 to
+110
°C
Storage Temperature Range T
stg
40 to
+150
°C
Mounting Torque (Note 2)
6.0 in. lb.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
TO225AA
CASE 077
STYLE 2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
SCRs
4 A RMS, 200 600 Volts
http://onsemi.com
K
G
A
MARKING DIAGRAM & PIN ASSIGNMENT
Y = Year
WW = Work Week
C106xx = Device Code
xx = B, D, D1, M, M1
G = PbFree Package
YWW
C106xxG
1. Cathode
2. Anode
3. Gate
C106 Series
http://onsemi.com
2
THERMAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Max Unit
Thermal Resistance, JunctiontoCase
R
q
JC
3.0 °C/W
Thermal Resistance, JunctiontoAmbient
R
q
JA
75 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds T
L
260 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, R
GK
= 1 kW)T
J
= 25°C
T
J
= 110°C
I
DRM
, I
RRM
10
100
mA
mA
ON CHARACTERISTICS
Peak Forward OnState Voltage (Note 3)
(I
TM
= 4 A)
V
TM
2.2 V
Gate Trigger Current (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100 W)T
J
= 25°C
T
J
= 40°C
I
GT
15
35
200
500
mA
Peak Reverse Gate Voltage (I
GR
= 10 mA)
V
GRM
6.0 V
Gate Trigger Voltage (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100 W)T
J
= 25°C
T
J
= 40°C
V
GT
0.4
0.5
0.60
0.75
0.8
1.0
V
Gate NonTrigger Voltage (Continuous dc) (Note 4)
(V
AK
= 12 V, R
L
= 100 W, T
J
= 110°C)
V
GD
0.2 V
Latching Current
(V
AK
= 12 V, I
G
= 20 mA, R
GK
= 1 kW)T
J
= 25°C
T
J
= 40°C
I
L
0.20
0.35
5.0
7.0
mA
Holding Current (V
D
= 12 Vdc)
(Initiating Current = 20 mA, R
GK
= 1 kW)T
J
= 25°C
T
J
= 40°C
T
J
= +110°C
I
H
0.19
0.33
0.07
3.0
6.0
2.0
mA
DYNAMIC CHARACTERISTICS
Critical RateofRise of OffState Voltage
(V
AK
= Rated V
DRM
, Exponential Waveform, R
GK
= 1 kW,
T
J
= 110°C)
dv/dt 8.0
V/ms
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
4. R
GK
is not included in measurement.
C106 Series
http://onsemi.com
3
+ Current
+ Voltage
V
TM
I
DRM
at V
DRM
I
H
Symbol Parameter
V
DRM
Peak Repetitive Off State Forward Voltage
I
DRM
Peak Forward Blocking Current
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak On State Voltage
I
H
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
Forward Blocking Region
I
RRM
at V
RRM
(off state)
DC
DC
JUNCTION TEMPERATURE 110°C
100
10
20
30
40
70
110
90
3.6
80
0 .4 .8 1.61.2 2.0 2.4 3.2
60
4.0
I
T(AV)
AVERAGE ON‐STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
50
6
4
2
0
8
0
10
2.8
3.6.4 .8 1.61.2 2.0 2.4 3.2 4.02.6
I
T(AV)
AVERAGE ON‐STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
C
°T , CASE TEMPERATURE ( C)
P , AVERAGE ON‐STATE POWER DISSIPATION (WATTS)
(AV)
Figure 1. Average Current Derating Figure 2. Maximum OnState Power Dissipation

C106M1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
THYRISTOR SCR 4A 600V TO-225AA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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