SQD40131EL
www.vishay.com
Vishay Siliconix
S17-1302-Rev. A, 21-Aug-17
2
Document Number: 76864
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -40 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2 -2.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= -40 V - - -1
μA V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C - - -250
On-state drain current
a
I
D(on)
V
GS
= -10 V V
DS
5 V -30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -30 A - 0.0095 0.0115
V
GS
= -10 V I
D
= -30 A, T
J
= 125 °C - - 0.0171
V
GS
= -10 V I
D
= -30 A, T
J
= 175 °C - - 0.0203
V
GS
= -4.5 V I
D
= -25 A - 0.0121 0.0150
Forward transconductance
b
g
fs
V
DS
= -15 V, I
D
= -30 A - 71 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz
- 4872 6600
pF Output capacitance C
oss
- 344 500
Reverse transfer capacitance C
rss
- 316 450
Total gate charge
c
Q
g
V
GS
= -10 V V
DS
= -20 V, I
D
= -30 A
-76115
nC Gate-source charge
c
Q
gs
-11.5-
Gate-drain charge
c
Q
gd
-13.5-
Gate resistance R
g
f = 1 MHz 2 4 6
Turn-on delay time
c
t
d(on)
V
DD
= -20 V, R
L
= 0.7
I
D
-30 A, V
GEN
= -10 V, R
g
= 1
-1320
ns
Rise time
c
t
r
-715
Turn-off delay time
c
t
d(off)
-66100
Fall time
c
t
f
-2845
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
---180A
Forward voltage V
SD
I
F
= -30 A, V
GS
= 0 V - -0.9 -1.5 V
Body diode reverse recovery time t
rr
I
F
= -30 A, di/dt = 100 A/μs
-4390ns
Body diode reverse recovery charge Q
rr
-45100nC
Reverse recovery fall time t
a
-26-
ns
Reverse recovery rise time t
b
-17-
Body diode peak reverse recovery current I
RM(REC)
--2.8- A
