TSM2307CX
30V P-Channel MOSFET
Document Number:
DS_P0000048 2
Version: D15
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case R
ӨJC
75 ℃/W
Thermal Resistance - Junction to Ambient R
ӨJA
130 ℃/W
Electrical Specifications
(T
C
= 25℃ unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max
Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= -250µA BV
DSS
-30 -- -- V
Drain-Source On-State Resistance
V
GS
= -10V, I
D
= -3A
R
DS(ON)
-- 76 95 mΩ
V
GS
= -4.5V, I
D
= -2A
-- 103 140 mΩ
Gate Threshold Voltage V
DS
= V
GS
, I
D
= -250µA V
GS(TH)
-1 -- -3 V
Zero Gate Voltage Drain Current V
DS
= -30V, V
GS
= 0V I
DSS
-- -- -1.0 µA
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±100
nA
Forward Transconductance
(Note 4)
V
DS
= -10V, I
D
= -6A g
fs
-- 5 -- S
Diode Forward Voltage I
S
= -1.7V, V
GS
= 0V V
SD
-1.2 V
Dynamic
Total Gate Charge
(Note 3,4)
V
DS
= -15V, I
D
= -3A,
V
GS
= -10V
Q
g
-- 10 15
nC
Gate-Source Charge
(Note 3,4)
Q
gs
-- 1.9 --
Gate-Drain Charge
(Note 3,4)
Q
gd
-- 2 --
Input Capacitance
V
DS
= -30V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 565 --
pF
Output Capacitance C
oss
-- 126 --
Reverse Transfer Capacitance C
rss
-- 75 --
Switching
Turn-On Delay Time
(Note 3,4))
V
DD
= -15V, R
L
= 15Ω,
I
D
= -1A, V
GEN
= -10V,
R
G
=6Ω
t
d(on)
-- 10 20
ns
Turn-On Rise Time
(Note 3,4)
t
r
-- 9 20
Turn-Off Delay Time
(Note 3,4)
t
d(off)
-- 27 50
Turn-Off Fall Time
(Note 3,4)
t
f
-- 7 16
Note:
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%
4. Switching time is essentially independent of operating temperature.
