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BFU550XAR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
1. Product profile
1.1 General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT143B package.
The BFU550X is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.75 dB at 900 MHz
Maximum stable gain 21.5 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
BFU550X
NPN wideband silicon RF transistor
Rev. 1 — 5 March 2014 Product data sheet
6
2
7
%
Table 1. Quick reference data
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - 15 50 mA
P
tot
total power dissipation T
sp
87 C
[1]
-- 450mW
h
FE
DC current gain I
C
=15mA; V
CE
=8V 60 95 200
C
c
collector capacitance V
CB
=8V; f=1MHz - 0.72 - pF
f
T
transition frequency I
C
=25mA; V
CE
= 8 V; f = 900 MHz - 11 - GHz
BFU550X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 2 of 22
NXP Semiconductors
BFU550X
NPN wideband silicon RF transistor
[1] T
sp
is the temperature at the solder point of the collector lead.
[2] If K > 1 then G
p(max)
is the maximum power gain. If K 1 then G
p(max)
=MSG.
2. Pinning information
3. Ordering information
[1] The customer evaluation kit contains the following:
a) Unpopulated RF amplifier Printed-Circuit Board (PCB)
b) Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration
c) Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)
d) BFU520X, BFU530X and BFU550X samples
e) USB stick with data sheets, application notes, models, S-parameter and noise files
4. Marking
G
p(max)
maximum power gain I
C
=15mA; V
CE
= 8 V; f = 900 MHz
[2]
- 21.5 - dB
NF
min
minimum noise figure I
C
=1mA; V
CE
= 8 V; f = 900 MHz;
S
=
opt
-0.75- dB
P
L(1dB)
output power at 1 dB gain
compression
I
C
=25mA; V
CE
=8V; Z
S
=Z
L
=50;
f=900MHz
- 13.5 - dBm
Table 1. Quick reference data
…continued
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1 collector
2emitter
3base
4emitter
DDD

Table 3. Ordering information
Type number Package
Name Description Version
BFU550X - plastic surface-mounted package; 4 leads SOT143B
OM7963 - Customer evaluation kit for BFU520X, BFU530X and BFU550X
[1]
-
Table 4. Marking
Type number Marking Description
BFU550X *TG * = t : made in Malaysia
* = w : made in China
BFU550X All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 5 March 2014 3 of 22
NXP Semiconductors
BFU550X
NPN wideband silicon RF transistor
5. Design support
6. Limiting values
7. Recommended operating conditions
[1] T
sp
is the temperature at the solder point of the controller lead.
Table 5. Available design support
Download from the BFU550X product information page on http://www.nxp.com.
Support item Available Remarks
Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.
SPICE model yes Based on Gummel-Poon device
model.
S-parameters yes
Noise parameters yes
Customer evaluation kit yes See Section 3
and Section 10.
Solder pattern yes
Application notes yes See Section 10.1
and Section 10.2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CB
collector-base voltage open emitter - 30 V
V
CE
collector-emitter voltage open base - 16 V
shorted base - 30 V
V
EB
emitter-base voltage open collector - 3 V
I
C
collector current -80mA
T
stg
storage temperature 65 +150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM) According to JEDEC
standard 22-A114E
- 150 V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
- 2kV
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - - 50 mA
P
i
input power Z
S
= 50 --10dBm
T
j
junction temperature 40 - +150 C
P
tot
total power dissipation T
sp
87 C
[1]
--450mW
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

BFU550XAR

Mfr. #:
Buy BFU550XAR
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors NPN wideband silicon RF transistor
Lifecycle:
New from this manufacturer.
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