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VS-E4PH6006L-N3

P1-P3P4-P6
VS-E4PH6006L-N3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
1
Document Number: 95898
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Soft Recovery Diode,
60 A FRED Pt
®
Gen 4
FEATURES
•Gen 4 FRED Pt
®
technology
•Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
• 175 °C operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
Gen 4 Fred technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
PRODUCT SUMMARY
Package TO-247AD 2L
I
F(AV)
60 A
V
R
600 V
V
F
at I
F
1.48 V
t
rr
typ. see Recovery table
T
J
max. 175 °C
Diode variation Single die
Base cathode
2
1
3
Cathode
Anode
TO-247AD 2L
1
3
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
R
600 V
Average rectified forward current I
F(AV)
T
C
= 106 °C 60
A
Single pulse forward current I
FSM
T
C
= 25 °C, t
p
= 8.3 ms, half sine wave 425
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage V
BR
, V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 50 A - 1.68 -
I
F
= 60 A - 1.75 2.0
I
F
= 50 A, T
J
= 125 °C - 1.44 -
I
F
= 60 A, T
J
= 125 °C - 1.55 -
I
F
= 50 A, T
J
= 150 °C - 1.39 -
I
F
= 60 A, T
J
= 150 °C - 1.48 1.65
Reverse leakage current I
R
V
R
= V
R
rated - - 50
μA
T
J
= 125 °C, V
R
= V
R
rated - - 500
Junction capacitance C
T
V
R
= 600 V - 30 - pF
VS-E4PH6006L-N3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
2
Document Number: 95898
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
T
J
= 25 °C
I
F
= 60 A
dI
F
/dt = 1000 A/μs
V
R
= 400 V
-68-
ns
T
J
= 125 °C - 92 -
Peak recovery current I
RRM
T
J
= 25 °C - 20 -
A
T
J
= 125 °C - 40 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 945 -
nC
T
J
= 125 °C - 2500 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction to case R
thJC
--0.6°C/W
Thermal resistance, case to heat sink R
thCS
Mounting surface, flat, smooth and greased - 0.25 -
Weight
-6.0- g
-0.21- oz.
Mounting torque
6.0
(5)
-
12
(20)
kgf · cm
(lbf · in)
Marking device Case style TO-247AD 2L E4PH6006L
1
10
100
1000
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I
F
- Instantaneous Forward Current (A)
V
F
-Forward Voltage Drop (V)
T
J
= 150°C
T
J
= 25 °C
T
J
= 175 °C
T
J
= 125°C
0.001
0.01
0.1
1
10
100
1000
0 200 400 600
I
R
- Reverse Current (μA)
V
R
- Reverse Voltage (V)
25 °C
125 °C
150 °C
175 °C
10
100
1000
0 100 200 300 400 500 600
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
VS-E4PH6006L-N3
www.vishay.com
Vishay Semiconductors
Revision: 23-Feb-18
3
Document Number: 95898
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Max. Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (P
d
+ P
dREV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see Fig.5)
P
dREV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R
= rated V
R
0.01
0.1
1
10
0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance
Junction to Case (°C/W)
t
1
- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
single pulse
80
100
120
140
160
180
020406080100
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
Square wave (D = 0.50)
80% rated V
R
applied
DC
0
30
60
90
120
150
180
0 102030405060708090
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
RMS limit
50
60
70
80
90
100
110
120
130
400 500 600 700 800 900 1000
t
rr
(ns)
dI
F
/dt (A/μs)
125 °C
25 ° C
0
500
1000
1500
2000
2500
3000
400 500 600 700 800 900 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
125 °C
25 °C
P1-P3P4-P6

VS-E4PH6006L-N3

Mfr. #:
Buy VS-E4PH6006L-N3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 60A FRED Pt TO-247 LL 2L
Lifecycle:
New from this manufacturer.
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