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BD746C-S

P1-P3P4-P4
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●
Designed for Complementary Use with the
BD745 Series
●
115 W at 25°C Case Temperature
●
20 A Continuous Collector Current
●
25 A Peak Collector Current
●
Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.92 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100 Ω,
V
BE(off)
= 0, R
S
= 0.1 Ω, V
CC
= -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (I
E
= 0)
BD746
BD746A
BD746B
BD746C
V
CBO
-50
-70
-90
-110
V
Collector-emitter voltage (I
B
= 0)
BD746
BD746A
BD746B
BD746C
V
CEO
-45
-60
-80
-100
V
Emitter-base voltage V
EBO
-5 V
Continuous collector current I
C
-20 A
Peak collector current (see Note 1) I
CM
-25 A
Continuous base current I
B
-7 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
tot
115 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) P
tot
3.5 W
Unclamped inductive load energy (see Note 4) ½LI
C
2
90 mJ
Operating free air temperature range T
A
-65 to +150 °C
Operating junction temperature range T
j
-65 to +150 °C
Storage temperature range T
stg
-65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds T
L
260 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
OBSOLETE
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA I
B
= 0 (see Note 5)
BD746
BD746A
BD746B
BD746C
-45
-60
-80
-100
V
I
CBO
Collector cut-off
current
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
V
BE
=0
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
BD746
BD746A
BD746B
BD746C
BD746
BD746A
BD746B
BD746C
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
mA
I
CEO
Collector cut-off
current
V
CE
= -30 V
V
CE
= -60 V
I
B
=0
I
B
=0
BD746/746A
BD746B/746C
-0.1
-0.1
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V I
C
=0 -0.5 mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
V
CE
= -4 V
I
C
= -1A
I
C
= -5A
I
C
=-20A
(see Notes 5 and 6)
40
20
5
150
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -0.5 A
I
B
= -5 A
I
C
= -5A
I
C
= -20 A
(see Notes 5 and 6)
-1
-3
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
V
CE
= -4 V
I
C
= -5 A
I
C
=-20 A
(see Notes 5 and 6)
-1
-3
V
h
fe
Small signal forward
current transfer ratio
V
CE
= -10 V I
C
= -1A f = 1 kHz 25
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= -10 V I
C
= -1A f = 1 MHz 5
thermal characteristics
PARAMETER MIN TYP MAX UNIT
R
θJC
Junction to case thermal resistance 1.1 °C/W
R
θJA
Junction to free air thermal resistance 35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS
†
MIN TYP MAX UNIT
t
d
Delay time
I
C
= -5 A
V
BE(off)
= 4.2 V
I
B(on)
= -0.5 A
R
L
= 6 Ω
I
B(off)
= 0.5 A
t
p
= 20 µs, dc ≤ 2%
20 ns
t
r
Rise time 120 ns
t
s
Storage time 600 ns
t
f
Fall time 300 ns
OBSOLETE
BD746, BD746A, BD746B, BD746C
PNP SILICON POWER TRANSISTORS
3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
MAXIMUM SAFE OPERATING REGIONS
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·1 -1·0 -10 -100
h
FE
- DC Current Gain
10
100
1000
TCS636AE
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
V
CE
= -4 V
t
p
= 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-0·1 -1·0 -10 -100
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-0·01
-0·1
-1·0
-10
TCS636AF
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
t
p
= 300µs, duty cycle < 2%
I
C
I
B
= 10
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
I
C
- Collector Current - A
-0·01
-0·1
-1·0
-10
-100
SAS635AC
BD746
BD746A
BD746B
BD746C
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
t
p
= 50 ms,
d = 0.1 = 10%
DC Operation
OBSOLETE
P1-P3P4-P4

BD746C-S

Mfr. #:
Buy BD746C-S
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 100V 40A PNP
Lifecycle:
New from this manufacturer.
Delivery:
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