SUM40N15-38-E3

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Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
Vishay Siliconix
SUM40N15-38
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Junction Temperature
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
V
GS
= 10 V
I
D
= 15 A
(Normalized)
- On-Resistance
R
DS(on)
Source-Drain Diode Forward Voltage
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100
10
1
0.3 0.6 0.9 1.2
T
J
= 25 °C
T
J
= 150 °C
0
Drain Source Breakdown
vs. Junction Temperature
145
155
165
175
185
195
- 50 - 25 0 25 50 75 100 125 150 175
T
J
- Junction Temperature (°C)
(V)V
DS
I
D
= 1 mA
Document Number: 72155
S09-1340-Rev. B, 13-Jul-09
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Vishay Siliconix
SUM40N15-38
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72155
.
Maximum Avalanche and Drain Current
vs. Case Temperature
0
9
18
27
36
45
0 25 50 75 100 125 150 175
T
C
- Ambient Temperature (°C)
- Drain Current (A)I
D
Safe Operating Area
1000
10
0.1 1 10 1000
0.1
100
T
C
= 25 °C
Single Pulse
1 ms
10 ms
100 ms, DC
10 µs
100 µs
1
100
V
DS
- Drain-to-Source Voltage (V)
*V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
Limited
by R
DS(on)
*
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
2
1
0.1
0.01
10
-4
10
-3
10
-2
10
-1
10
Normalized Effective Transient
Thermal Impedance
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.05
0.02
1
Package Information
www.vishay.com
Vishay Siliconix
Revison: 30-Sep-13
1
Document Number: 71198
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-263 (D
2
PAK): 3-LEAD
Notes
1. Plane B includes maximum features of heat sink tab and plastic.
2. No more than 25 % of L1 can fall above seating plane by
max. 8 mils.
3. Pin-to-pin coplanarity max. 4 mils.
4. *: Thin lead is for SUB, SYB.
Thick lead is for SUM, SYM, SQM.
5. Use inches as the primary measurement.
6. This feature is for thick lead.
-A-
-B-
D1
D4
A
A
e
b2
b
E
A
c2
c
L2
D
L3
L
Detail “A”
E1
E2
K
E3
D2
D3
6
0.010
M
A
M
2 PL
DETAIL A (ROTATED 90°)
SECTION A-A
0° - 5°
L1
L4
M
c1
c
b1
b
INCHES MILLIMETERS
DIM. MIN. MAX. MIN. MAX.
A 0.160 0.190 4.064 4.826
b 0.020 0.039 0.508 0.990
b1 0.020 0.035 0.508 0.889
b2 0.045 0.055 1.143 1.397
c*
Thin lead 0.013 0.018 0.330 0.457
Thick lead 0.023 0.028 0.584 0.711
c1
Thin lead 0.013 0.017 0.330 0.431
Thick lead 0.023 0.027 0.584 0.685
c2 0.045 0.055 1.143 1.397
D 0.340 0.380 8.636 9.652
D1 0.220 0.240 5.588 6.096
D2 0.038 0.042 0.965 1.067
D3 0.045 0.055 1.143 1.397
D4 0.044 0.052 1.118 1.321
E 0.380 0.410 9.652 10.414
E1 0.245 - 6.223 -
E2 0.355 0.375 9.017 9.525
E3 0.072 0.078 1.829 1.981
e 0.100 BSC 2.54 BSC
K 0.045 0.055 1.143 1.397
L 0.575 0.625 14.605 15.875
L1 0.090 0.110 2.286 2.794
L2 0.040 0.055 1.016 1.397
L3 0.050 0.070 1.270 1.778
L4 0.010 BSC 0.254 BSC
M - 0.002 - 0.050
ECN: T13-0707-Rev. K, 30-Sep-13
DWG: 5843

SUM40N15-38-E3

Mfr. #:
Manufacturer:
Vishay
Description:
MOSFET N-CH 150V 40A D2PAK
Lifecycle:
New from this manufacturer.
Delivery:
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