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NVD5C688NLT4G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2015
January, 2017 − Rev. 1
1 Publication Order Number:
NVD5C688NL/D
NVD5C688NL
Power MOSFET
60 V, 27.4 mW, 17 A, Single N−Channel
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Q
G
and Capacitance to Minimize Driver Losses
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
"16 V
Continuous Drain Cur-
rent R
q
JC
(Notes 1 & 3)
Steady
State
T
C
= 25°C
I
D
17
A
T
C
= 100°C 12
Power Dissipation R
q
JC
(Note 1)
T
C
= 25°C
P
D
18
W
T
C
= 100°C 9.0
Continuous Drain
Current R
q
JA
(Notes 1, 2 & 3)
Steady
State
T
A
= 25°C
I
D
7.0
A
T
A
= 100°C 5.0
Power Dissipation R
q
JA
(Notes 1 & 2)
T
A
= 25°C
P
D
2.9
W
T
A
= 100°C 1.45
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
77 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
20 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 1 A)
E
AS
48 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) (Note 1)
R
q
JC
8.05
°C/W
Junction−to−Ambient − Steady State (Note 2)
R
q
JA
51.6
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
60 V
27.4 mW @ 10 V
R
DS(on)
17 A
I
D
V
(BR)DSS
40 mW @ 4.5 V
1
2
3
4
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
Gate
2
Drain
3
Source
4
Drain
AYWW
5C
688LG
A = Assembly Location
Y = Year
WW = Work Week
5C688L = Device Code
G = Pb−Free Package
G
S
N−CHANNEL MOSFET
D
NVD5C688NL
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
60 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
27 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C 10
mA
T
J
= 125°C 250
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.2 2.1 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
4.4 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V, I
D
= 10 A 22.8 27.4
mW
V
GS
= 4.5 V, I
D
= 10 A 32 40
Forward Transconductance g
FS
V
DS
= 5 V, I
D
= 10 A 20 S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
C
iss
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
400
pF
Output Capacitance C
oss
170
Reverse Transfer Capacitance C
rss
12
Total Gate Charge Q
G(TOT)
V
DS
= 48 V,
I
D
= 10 A
V
GS
= 4.5 V
3.4
nC
V
GS
= 10 V
7.0
Threshold Gate Charge Q
G(TH)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A
0.9
nC
Gate−to−Source Charge Q
GS
1.5
Gate−to−Drain Charge Q
GD
1.1
Plateau Voltage V
GP
2.9 V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
t
d(on)
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A, R
G
= 2.5 W
8
ns
Rise Time t
r
42
Turn−Off Delay Time t
d(off)
11
Fall Time t
f
24
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C 0.9 1.2
V
T
J
= 125°C 0.8
Reverse Recovery Time t
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 10 A
17
ns
Charge Time ta 8
Discharge Time tb 9
Reverse Recovery Charge Q
RR
10 nC
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVD5C688NL
www.onsemi.com
3
TYPICAL CHARACTERISTICS
..
0
5
10
20
30
40
01 345
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V) V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (V) I
D
, DRAIN CURRENT (A)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
T
J
, JUNCTION TEMPERATURE (°C) V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
I
DSS
, LEAKAGE (nA)
2.6 V
3.0 V
T
J
= 125°C
T
J
= 25°C
T
J
= −55°C
T
J
= 25°C
I
D
= 10 A
T
J
= 25°C
V
GS
= 10 V
V
GS
= 10 V
I
D
= 10 A
T
J
= 125°C
T
J
= 85°C
3.4 V
V
DS
= 5 V
T
J
= 150°C
V
GS
= 5 V to 10 V
2.8 V
3.2 V
0
10
15
25
35
40
0 0.5 1.0 1.5 2.0
3.6 V
20
30
35
45
50
34 5 6 7 8 910
50
5 6 10 11 15
40
25
20
15
10
8
0.6
0.8
1.0
1.4
1.6
1.8
2.0
−50 −25 0 25 50 75 100 125 150 175
0.01
100
1000
10000
5101520
30
45
1.2
30 35
T
J
= 25°C
10
1
0.1
2.5
2.4 V
25
40
7 9 12 13
35
25 55
2
15
25
35
V
GS
= 4.5 V
14
40 45 50
30
20
5
P1-P3P4-P6

NVD5C688NLT4G

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Manufacturer:
ON Semiconductor
Description:
MOSFET T6 60V LL DPAK
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