AT49F512-70JI

1
Features
Single Voltage Operation
5V Read
5V Reprogramming
Fast Read Access Time - 50 ns
Internal Program Control and Timer
8K Bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte-by-Byte Programming - 10 µs/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
30 mA Active Current
100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F512 is a 5-volt-only in-system programmable and erasable Flash Memory.
Its 512K of memory is organized as 65,536 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 50
ns with a power dissipation of just 165 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 100 µA.
To allow for simple in-system reprogrammability, the AT49F512 does not require high
input voltages for programming. Five-volt-only commands determine the read and
programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49F512 is performed by erasing the
entire 512K of memory and then programming on a byte by byte basis. The typical
byte programming time is a fast 10 µs. The end of a program cycle can be optionally
Rev. 1027D–04/99
512K (64K x 8)
5-volt Only
Flash Memory
AT49F512
512K (64K x 8)
5-volt Only
CMOS Flash
Memory
Pin Configurations
Pin Name Function
A0 - A15 Addresses
CE
Chip Enable
OE
Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
NC
NC
VCC
WE
NC
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
NC
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)
AT49F512
2
detected by the DATA
polling feature. Once the end of a
byte program cycle has been detected, a new access for a
read or program can begin. The typical number of program
and erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a repro-
gramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
and when the feature is enabled, the boot sector is perma-
nently protected from being reprogrammed.
Block Diagram
Device Operation
READ:
The AT49F512 is accessed like an EPROM. When
CE
and OE are low and WE is high, the data stored at the
memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE
or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
ERASURE:
Before a byte can be reprogrammed, the 64K
bytes memory array (or 56K bytes if the boot block featured
is used) must be erased. The erased state of the memory
bits is a logical “1”. The entire device can be erased at one
time by using a 6-byte software code. The chip erase code
consists of 6-byte load commands to specific address loca-
tions with a specific data pattern (please refer to the Chip
Erase Cycle Waveforms).
After the chip erase has been initiated, the device will inter-
nally time the erase operation so that no external clocks
are required. The maximum time needed to erase the
whole chip is t
EC
. If the boot block lockout feature has been
enabled, the data in the boot sector will not be erased.
BYTE PROGRAMMING:
Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can con-
vert “0s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle
operation (please refer to the Command Definitions table).
The device will automatically generate the required internal
program pulses.
The program cycle has addresses latched on the falling
edge of WE
or CE, whichever occurs last, and the data
latched on the rising edge of WE
or CE, whichever occurs
first. Programming is completed after the specified t
BP
cycle
time. The DATA
polling feature may also be used to indicate
the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT:
The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 8K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
0000H to 1FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular pro-
gramming method. To activate the lockout feature, a series
of six program commands to specific addresses with spe-
cific data must be performed. Please refer to the Command
Definitions table.
BOOT BLOCK LOCKOUT DETECTION:
A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out. If the data on I/O0 is low, the boot block can be
programmed; if the data on I/O0 is high, the program lock-
FFFFH
2000H
1FFFH
0000H
AT49F512
3
out feature has been activated and the block cannot be
programmed. The software product identification code
should be used to return to standard operation.
PRODUCT IDENTIFICATION:
The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING:
The AT49F512 features DATA
polling to
indicate the end of a program cycle. During a program
cycle an attempted read of the last byte loaded will result in
the complement of the loaded data on I/O7. Once the pro-
gram cycle has been completed, true data is valid on all
outputs and the next cycle may begin. DATA
polling may
begin at any time during the program cycle.
TOGGLE BIT:
In addition to DATA
polling the AT49F512
provides another method for determining the end of a pro-
gram or erase cycle. During a program or erase operation,
successive attempts to read data from the device will result
in I/O6 toggling between one and zero. Once the program
cycle has completed, I/O6 will stop toggling and valid data
will be read. Examining the toggle bit may begin at any time
during a program cycle.
HARDWARE DATA PROTECTION:
Hardware features
protect against inadvertent programs to the AT49F512 in
the following ways: (a) V
CC
sense: if V
CC
is below 3.8V (typ-
ical), the program function is inhibited. (b) Program inhibit:
holding any one of OE
low, CE high or WE high inhibits
program cycles. (c) Noise filter: Pulses of less than 15 ns
(typical) on the WE
or CE inputs will not initiate a program
cycle.
Notes: 1. The 8K byte boot sector has the address range 0000H to 1FFFH.
2. Either one of the Product ID exit commands can be used.
Command Definition (in Hex)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read 1 Addr D
OUT
Chip Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
Byte Program 4 5555 AA 2AAA 55 5555 A0 Addr D
IN
Boot Block
Lockout
(1)
6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID
Entry
3 5555 AA 2AAA 55 5555 90
Product ID
Exit
(2)
3 5555 AA 2AAA 55 5555 F0
Product ID
Exit
(2)
1 XXXX F0
Absolute Maximum Ratings*
Temperature Under Bias................................ -55
°
C to +125
°
C
*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages
(including NC pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on OE
with Respect to Ground...................................-0.6V to +13.5V

AT49F512-70JI

Mfr. #:
Manufacturer:
Description:
IC FLASH 512K PARALLEL 32PLCC
Lifecycle:
New from this manufacturer.
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