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IRL3705NPBF

P1-P3P4-P6P7-P9
IRL3705NPbF
1 2018-05-25
Absolute Maximum Ratings
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 89
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 63
I
DM
Pulsed Drain Current 310
W
P
D
@T
C
= 25°C Maximum Power Dissipation 170
Linear Derating Factor 1.1 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 340 mJ
I
AR
Avalanche Current 46 A
E
AR
Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.90
°C/W
R
JA
Junction-to-Ambient ––– 62
R
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
G D S
Gate Drain Source
TO-220AB
IRL3705NPbF
HEXFET
®
Power MOSFET
D
S
G
V
DSS
55V
R
DS(on)
max.
0.01
I
D
89A
Description
Fifth Generation HEXFETs utilize advanced
processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
Logic - Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
Base part number Package Type
Standard Pack
Orderable Part Number
Form Quantity
IRL3705NPbF TO-220 Tube 50 IRL3705NPbF
S
D
G
IRL3705NPbF
2 2018-05-25
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
V
DD
= 25V, starting T
J
= 25°C, L = 320H, R
G
= 25, I
AS
= 46A.(See fig.12)
I
SD
46A, di/dt 250A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 300µs; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature; for recommended current- handling of the
package refer to Design TIP # 93-4
.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-
Resistance
––– ––– 0.010

V
GS
= 10V, I
D
= 46A
––– ––– 0.012 V
GS
= 5.0V, I
D
= 46A
––– ––– 0.018 V
GS
= 4.0V, I
D
= 39A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
gfs Forward Trans conductance 50 ––– ––– S V
DS
= 25V, I
D
= 46A
I
DSS
Drain-to-Source Leakage Current
––– ––– 25
µA
V
DS
= 55V, V
GS
= 0V
––– ––– 250 V
DS
= 44V,V
GS
= 0V,T
J
=150°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 98
nC
I
D
= 46A
Q
gs
Gate-to-Source Charge ––– ––– 19 V
DS
= 44V
Q
gd
Gate-to-Drain Charge ––– ––– 49
V
GS
= 5.0V , See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 12 –––
ns
V
DD
= 28V
t
r
Rise Time ––– 140 –––
I
D
= 46A
t
d(off)
Turn-Off Delay Time ––– 37 –––
R
G
= 1.8V
GS
= 5.0V
t
f
Fall Time ––– 78 –––
R
D
= 0.59See Fig. 10
L
D
Internal Drain Inductance ––– 4.5 –––
Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 –––
from package
and center of die contact
C
iss
Input Capacitance ––– 3600 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 870 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 320 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– ––– 89
A
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
––– ––– 310
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C,I
S
= 46A,V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 94 140 ns
T
J
= 25°C ,I
F
= 46A
Q
rr
Reverse Recovery Charge ––– 290 440 nC
di/dt = 100A/µs 
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
nH
IRL3705NPbF
3 2018-05-25
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance
vs. Temperature
Fig. 1 Typical Output Characteristics
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
2.0 3.0 4.0 5.0 6.0 7.0 8.0
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 77A
D
P1-P3P4-P6P7-P9

IRL3705NPBF

Mfr. #:
Buy IRL3705NPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 77A 65.3nC 10mOhm LogLvAB
Lifecycle:
New from this manufacturer.
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