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IXDH35N60B
P1-P3
P4-P4
© 200
2
IXYS All rights reserved
4 - 4
IXDP 35N60 B
IXDH 35N60 B
IXDH 35N60 BD1
Fig. 7
Typ. turn on energy and switching
Fig. 8
Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9
Typ. turn on energy and switching
Fig.10
Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11
Reverse bi
ased safe operating area
Fig. 12
Typ. transient thermal impedance
RBSOA
10
20
30
40
50
60
0
1
2
3
4
0
20
40
60
80
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.001
0.01
0.1
1
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
0
200
400
600
800
0
5
10
1
5
20
2
5
30
35
40
0.0
0.5
1.0
1.5
2.0
0
15
30
45
60
single p
ulse
V
CE
= 300V
V
GE
= ±15V
R
G
= 10
T
J
= 125
°
C
IXDH30N60B
V
CE
= 300V
V
GE
= ±15V
I
C
= 35A
T
J
= 125
°
C
0
100
200
3
00
400
5
00
600
7
00
0
20
40
60
80
100
120
R
G
= 10
T
J
= 125
°
C
V
CE
= 300V
V
GE
= ±15V
R
G
= 10
T
J
= 125
°
C
E
on
V
CE
= 300V
V
GE
= ±15V
I
C
= 35A
T
J
= 125
°
C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(of
f)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/
W
Z
thJC
IGB
T
diode
V
A
mJ
ns
ns
mJ
P1-P3
P4-P4
IXDH35N60B
Mfr. #:
Buy IXDH35N60B
Manufacturer:
Littelfuse
Description:
IGBT Transistors 35 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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IXDH35N60BD1
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