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DMN2112SN-7

P1-P3P4-P5
DMN2112SN
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
R
DS(ON) max
I
D
T
A
= +25°C
20V
10Ω @ V
GS
= 4.5V
0.5A
14Ω @ V
GS
= 2.5V
0.5A
25Ω @ V
GS
= 1.5V
0.1A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• Notebook Computer
• Portable Phone
•
PCMCIA Cards and Battery Powered Circuits
Features
• Low On-Resistance
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SC59
• Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.014 grams (approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2112SN-7
SC59
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2007
2009
…
2012
2013
2014
2015
2016
Code
U
W
…
Z
A
B
C
D
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SC59
TOP VIEW
Pin Out Configuration
TOP VIEW
EQUIVALENT CIRCUIT
D
G
S
NS1
Y
M
D
S
G
Gate Protection
Diode
DMN2112SN
Document number: DS30830 Rev. 6 - 2
1 of 5
www.diodes.com
August 2014
© Diodes Incorporated
DMN2112SN
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C unless otherwise specified)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
20
V
Gate-Source Voltage Continuous
V
GSS
± 8
V
Drain Current Continuous
Pulsed
I
D
1.2
4.0
A
Thermal Characteristics (@T
A
= +25°C unless otherwise specified)
Characteristic
Symbol
Value
Units
Total Power Dissipation
P
d
500
mW
Thermal Resistance, Junction to Ambient
R
θ
JA
250
°C /W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics (@T
A
= +25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current @ T
j
= +25°C
I
DSS
10
µA
V
DS
= 20V, V
GS
= 0V
Gate-Body Leakage
I
GSS
± 10
µA
V
GS
= ± 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.5
1.2
V
V
DS
= 10V, I
D
= 1.0mA
Static Drain-Source On-Resistance
R
DS (ON)
0.10
0.14
0.25
Ω
V
GS
= 4.5V, I
D
= 0.5A
V
GS
= 2.5V, I
D
= 0.5A
V
GS
= 1.5V, I
D
= 0.1A
Forward Transfer Admittance
IY
fs
I
4.2
S
V
DS
= 10V, I
D
=0.5A
Diode Forward Voltage
V
SD
0.8
1.1
V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
220
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
120
pF
Reverse Transfer Capacitance
C
rss
45
pF
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t
D(ON)
10
ns
V
DD
= 5V, I
D
= 0.5A,
V
GS
= 10V, R
GEN
= 50Ω
Turn-Off Delay Time
t
D(OFF)
75
ns
Turn-On Rise Time
t
r
15
ns
Turn-Off Fall Time
t
f
65
ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
Fig. 1 Typical Output Characteristics
0
1
2
3
4
5
0 0.5
1 1.5 2 2.5 3
V , DRAIN-SOURCE VOLTAGE (V)
DS
I , DRAIN CURRENT (A)
D
T =25°C
A
3V, 3.5V, 4V
2.5V
2.0V
V = 1.0
GS
1.5V
V =10V
DS
T = 125°C
A
T = 25°C
A
T = -55°C
A
DMN2112SN
Document number: DS30830 Rev. 6 - 2
2 of 5
www.diodes.com
August 2014
© Diodes Incorporated
DMN2112SN
NEW PRODUCT
I = 0.5A
D
I = 1.0A
D
T = 25°C
J
V = 1.5V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.5V
GS
I = 0.5A
D
I = 0.1A
D
V = 2.5V
GS
V = 4.5V
GS
I = 0.5A, 1A
D
I = 0.5A, 1A
D
V = 10V
I = 1mA
DS
D
V = 4.5V
GS
1.5V
2.5V
0V
-4.5V
f=1MHz
V =0V
GS
T =25°C
A
C
iss
C
oss
C
rss
DMN2112SN
Document number: DS30830 Rev. 6 - 2
3 of 5
www.diodes.com
August 2014
© Diodes Incorporated
P1-P3P4-P5

DMN2112SN-7

Mfr. #:
Buy DMN2112SN-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V 1.2A
Lifecycle:
New from this manufacturer.
Delivery:
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