TSA5059ATS/C1,118 Datasheet TSA5059ATS/C1,118 | P10-P12

2000 Oct 24 10

Philips Semiconductors Product speciﬁcation

2.7 GHz I

C-bus controlled low phase

noise frequency synthesizer

TSA5059A

XT/COMP frequency output

It is possible to output either the crystal or the comparison

frequency at pin XT/COMP to be used in the application.

For example, to drive a second PLL synthesizer saving a

quartz crystal. To output f

xtal

it is necessary to set bit XCE

to logic 1 and bit XCS to logic 0 or bit XCE to logic 0 and

bit XCS to logic 1 during a test mode, while to output f

comp

it is necessary to set both bits XCE and XCS to logic 1.

If the output signal at this pin is not used it is recommended

to disable it by setting both bits XCE and XCS to logic 0.

Table 10 shows how this pin is programmed. At power-on

the XT/COMP output is set with the f

xtal

signal selected.

Prescaler enable

The TSA5059A is able to work with the relation

comp

= step size for an input frequency up to 2.3 GHz,

covering the complete satellite zero-IF frequency range.

For applications with an input frequency higher than

2.3 GHz it is necessary to use the prescaler by 2.

The prescaler is selected by setting bit PE to logic 1 and

it is not in use if bit PE is set to logic 0.

For satellite zero-IF applications (frequency between

950 and 2150 MHz), and especially if it is important to

reach a low phase noise on the controlled VCO, it is

recommended to set bit PE to logic 0 and not to use the

prescaler allowing the comparison frequency to be equal

to the step size.

Test modes

It is possible to access the test modes by setting bit XCE

to logic 0 and bit XCS to logic 1. One specific test mode is

then selected using bits T2, T1 and T0 as described in

Table 10.

Table 10 XT/COMP and test mode selection; note 1

Notes

1. X = don’t care.

2. Status at Power-on reset.

XCE XCS T2 T1 T0 XT/COMP OUTPUT TEST MODE

0 0 X X X disabled normal operation

10XXXf

xtal

normal operation

11XXXf

comp

normal operation

01000f

xtal

test operation: charge pump sink;

status byte bit FL = 1

01001f

xtal

test operation: charge pump source;

status byte bit FL = 0

01010f

xtal

test operation: charge pump disabled;

status byte bit FL = 0

01011f

xtal

test operation:

⁄

DIV

switched to Port P0

011XXf

xtal

test operation: drive output (pin DRIVE)

is off (low-voltage) to allow the tuning

voltage to reach the maximum value;

note 2

2000 Oct 24 11

Philips Semiconductors Product speciﬁcation

2.7 GHz I

C-bus controlled low phase

noise frequency synthesizer

TSA5059A

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); note 1.

Note

1. Maximum ratings cannot be exceeded, not even momentarily without causing irreversible IC damage. Maximum

ratings cannot be accumulated.

HANDLING

Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be completely safe, it is

desirable to take normal precautions appropriate to handling integrated circuits.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

supply voltage −0.3 +6.0 V

voltage on pins

CP, XTAL, XT/COMP, AS, P0, P1, P2,

P3, ADC, RFA and RFB

−0.3 V

+ 0.3 V

SCL and SDA −0.3 +6.0 V

O(drive)

output current on pin DRIVE −1+1mA

O(SDA)

serial data output current −1.0 +10.0 mA

O(Px)

P0, P1, P2 and P3 output current port switched on −1.0 +20.0 mA

O(ΣPx)

sum of currents in P0, P1, P2 and P3 − 50.0 mA

amb

ambient temperature −20 +85 °C

stg

storage temperature −40 +150 °C

j(max)

maximum junction temperature − 150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

th(j-a)

thermal resistance from junction to ambient in free air

TSA5059AT 115 K/W

TSA5059ATS 144 K/W

2000 Oct 24 12

Philips Semiconductors Product speciﬁcation

2.7 GHz I

C-bus controlled low phase

noise frequency synthesizer

TSA5059A

CHARACTERISTICS

= 4.75 to 5.25 V; T

amb

= −20 to +85 °C; f

xtal

= 4 MHz; measured according to Fig.4; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply (pin V

)

supply voltage 4.75 5.0 5.25 V

supply current T

amb

=25°C 303745mA

CC(POR)

supply voltage below which POR is active T

amb

=25°C − 2.75 − V

RF inputs (pins RFA and RFB)

i(RF)

RF input frequency 900 − 2700 MHz

i(RF)(rms)

RF input voltage (RMS value) f

i(RF)

between 900 and

2200 MHz; note 1

7.1 − 300 mV

−30 − +2.5 dBm

i(RF)

between 2.2 and

2.7 GHz; notes 1 and 2

22.4 − 300 mV

−20 − +2.5 dBm

i(RF)

RF input impedance see Fig.6 −−−Ω

i(RF)

RF input capacitance see Fig.6 −−−pF

MDR main divider ratio prescaler disabled 64 − 131071

prescaler enabled 128 − 262142

Crystal oscillator (pin XTAL)

xtal

crystal frequency 4 − 16 MHz

Z

XTAL

 crystal oscillator negative impedance 4 MHz crystal 400 680 −Ω

XTAL

recommended crystal series resistance 4 MHz crystal −−200 Ω

XTAL

crystal drive level 4 MHz crystal; note 3 − 40 −µW

i(ext)

external reference input frequency note 4 2 − 20 MHz

i(ext)(p-p)

external reference input voltage

(peak-to-peak value)

note 4 200 − 500 mV

Phase comparator and charge pump

comp

comparison frequency −−2 MHz

comp

equivalent phase noise at the phase

detector input

comp

= 250 kHz;

C1=C0=1;

in the loop bandwidth

−−157 − dBc/Hz

I

 charge pump current C1 = 0; C0 = 0 100 135 170 µA

C1 = 0; C0 = 1 210 280 350 µA

C1 = 1; C0 = 0 450 600 750 µA

C1 = 1; C0 = 1 920 1230 1540 µA

LO(cp)

charge pump output leakage current −10 0 +10 nA

DRIVE output (pin DRIVE)

O(drive)

output voltage when the charge pump is

sinking current

XCE = 0; XCS = 1;

T2 = 0; T1 = 0; T0 = 0

− 140 250 mV

O(drive)

output current when the charge pump is

sourcing current

XCE = 0; XCS = 1;

T2 = 0; T1 = 0; T0 = 1

100 250 −µA

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TSA5059ATS/C1,118

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IC SYNTH FREQ 2.7GHZ 16-SSOP

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TSA5059ATS/C1,118