LXA08T600, LXA08B600, LXA08FP600
Qspeed
™
Family
600 V, 8 A X-Series PFC Diode
www.powerint.com January 2011
Product Summary
I
F(AVG)
8 A
V
RRM
600 V
Q
RR
(Typ at 125 °C) 82 nC
I
RRM
(Typ at 125 °C) 3.5 A
Softness t
b
/t
a
(Typ at 125 °C) 0.55
TO-220AC TO-263AB
LXA08T600 LXA08B600
TO-220 FullPak
LXA08FP600
General Description
This device has the lowest Q
RR
of any 600V
Silicon diode. Its recovery characteristics
increase efficiency, reduce EMI and eliminate
snubbers.
Applications
• Power Factor Correction (PFC) Boost Diode
• Motor drive circuits
• DC-AC Inverters
Features
• Low Q
RR
, Low I
RRM
, Low t
RR
• High dI
F
/dt capable (1000A/µs)
• Soft recovery
• FullPak Insulation = 2500V
RMS
Benefits
• Increases efficiency
• Eliminates need for snubber circuits
• Reduces EMI filter component size & count
• Enables extremely fast switching
RoHS Compliant
Package uses Lead-free plating and
Green mold compound.
Halogen free per IEC 61249-2-21.
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol Parameter Conditions Rating Units
V
RRM
Peak repetitive reverse voltage 600 V
T
J
= 150 °C, T
C
= 122 °C (220AC, 263AB) 8 A
I
F(AVG)
Average forward current
T
J
= 150 °C, T
C
= 81°C. (FullPak)
I
FSM
Non-repetitive peak surge current 60 Hz, ½ cycle 60 A
I
FSM
Non-repetitive peak surge current ½ cycle of t=28 µs Sinusoid, T
C
=25 °C 350 A
T
J(MAX)
Maximum junction temperature 150 °C
T
STG
Storage temperature –55 to 150 °C
Lead soldering temperature Leads at 1.6 mm from case, 10 sec 300 °C
T
C
= 25 °C. (220AC, 263AB) 83 W
P
D
Power dissipation
T
C
= 25°C. (FullPak) 34 W
Pin Assignment
AKAK
K
K
A
K
K
K
K
A
NC
K
A
K
NCNC
K
A
K
A
K
A
K
