BAT6404E6327HTSA1

2007-06-11
1
BAT64...
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAT64 BAT64-04
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
BAT64-02W
!
!
,
,
!
,
,
!
,
,
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration L
S
(nH) Marking
BAT64
BAT64-02W
BAT64-04
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
SOT23
SCD80
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
single
single
series
series
common cathode
common cathode
common anode
common anode
1.8
0.6
1.8
1.4
1.8
1.4
1.8
1.4
63s
64
64s
64s
65s
65s
66s
66s
1
Pb-containing package may be available upon special request
2007-06-11
2
BAT64...
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage V
R
40 V
Forward current I
F
250 mA
Non-repetitive peak surge forward current
(t 10ms)
I
FSM
800
Average rectified forward current (50/60Hz, sinus) I
FAV
120
Total power dissipation
BAT64, T
S
86°C
BAT64-02W, T
S
121°C
BAT64-04, BAT64-06, T
S
61°C
BAT64-04W, BAT64-06W, T
S
111°C
BAT64-05, T
S
36°C
BAT64-05W, T
S
104°C
P
tot
250
250
250
250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature T
st
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point
1)
BAT64
BAT64-02W
BAT64-04, BAT64-06,
BAT64-04W, BAT64-06W
BAT64-05
BAT64-05W
R
thJS
255
115
355
155
455
185
K/W
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-06-11
3
BAT64...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I
(BR)
= 10 µA
V
(BR)
40 - - V
Reverse current
V
R
= 30 V
V
R
= 30 V, T
A
= 85 °C
I
R
-
-
-
-
2
200
µA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
V
F
270
310
370
500
320
385
440
570
350
430
520
750
mV
AC Characteristics
Diode capacitance
V
R
= 1 V, f = 1 MHz
C
T
- 4 6 pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA, measured I
R
= 1 mA ,
R
L
= 100
t
rr
- - 5 ns

BAT6404E6327HTSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
Schottky Diodes & Rectifiers 40V 0.12A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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