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VEMT2503X01

P1-P3P4-P6P7-P8
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 08-Apr-13
1
Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon NPN Phototransistor
DESCRIPTION
VEMT2503X01 series are silicon NPN epitaxial planar
phototransistors in a miniature dome lens, clear epoxy
package for surface mounting. The device is sensitive to
visible and near infrared radiation.
FEATURES
• Package type: surface mount
• Package form: GW, RGW
• Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55
• AEC-Q101 qualified
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: = ± 35°
• Package matched with IR emitter series
VSMB2943RGX01 and VSMB2943GX01
• Floor life: 4 weeks, MSL 2a, acc. J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Detector in automotive applications
• Photo interrupters
• Miniature switches
• Counters
•Encoders
• Position sensors
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
VEMT2503X01
VEMT2523X01
PRODUCT SUMMARY
COMPONENT I
ca
(mA) (deg)
0.1
(nm)
VEMT2503X01 2.7 ± 35 470 to 1090
VEMT2523X01 2.7 ± 35 470 to 1090
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMT2503X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing
VEMT2523X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 08-Apr-13
2
Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector emitter voltage V
CEO
20 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Power power dissipation T
amb
75 °C P
V
100 mW
Junction temperature T
j
100 °C
Operating temperature range T
amb
- 40 to + 100 °C
Storage temperature range T
stg
- 40 to + 100 °C
Soldering temperature Acc. reflow profile fig. 8 T
sd
260 °C
Thermal resistance junction/ambient Acc. J-STD-051 R
thJA
250 K/W
0
20
40
60
80
100
120
0 102030405060708090100
21619
R
thJA
= 250 K/W
T
amb
- Ambient Temperature (°C)
P
V
- Power Dissipation (mW)
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 0.1 mA V
CEO
20 V
Collector dark current V
CE
= 5 V, E = 0 I
CEO
1 100 nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz, E = 0 C
CEO
25 pF
Collector light current
E
e
= 1 mW/cm
2
, = 950 nm,
V
CE
= 5 V
I
ca
1.3 2.7 4.1 mA
Angle of half sensitivity ± 35 deg
Wavelength of peak sensitivity
p
850 nm
Range of spectral bandwidth
0.1
470 to 1090 nm
Collector emitter saturation voltage I
C
= 0.05 mA V
CEsat
0.4 V
Temperature coefficient of Ica
E
e
= 1 mW/cm
2
, = 950 nm,
V
CE
= 5 V
Tk
Ica
1.1 %/K
VEMT2503X01, VEMT2523X01
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 08-Apr-13
3
Document Number: 84168
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Rise/Fall Time vs. Collector Current
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 7 - Relative Collector Current vs. Ambient Temperature
1
10
100
1000
10 000
0 102030405060708090100
T
amb
- Ambient Temperature (°C)
I
CE0
- Collector Dark Current (nA)
I
F
= 0
V
CE
= 70 V
V
CE
= 25 V
V
CE
= 5 V
20594
I
ca
- Collector Light Current (mA)
E
e
- Irradiance (mW/cm²)
0.1
1
10
100
0.01 0.1 1 10
V
CE
= 5 V,
λ = 950 nm
0
10
20
30
40
50
60
70
80
90
100
0 250 500 750 1000 1250 1500 1750 2000
I
C
- Collector Current (µA)
t
r
/t
f
- Rise/Fall Time (µs)
t
f
t
r
20599
R
L
= 100 Ω
0
0.2
0.4
0.6
0.8
1.0
1.2
400 500 600 700 800 900 1000 1100
21555
λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 00.6
0.9
0.8
0° 30°10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S
rel
- Relative Radiant Sensitivity
ϕ - Angular Displacement
0
0.6
0.8
1.0
1.2
1.4
2.0
20 40 60 80
100
1.6
1.8
λ
94 8239
T
amb
- Ambient Temperature (°C)
I
ca rel
- Relative Collector Current
V
CE
= 5 V
E
e
= 1 mW/cm
2
= 950 nm
P1-P3P4-P6P7-P8

VEMT2503X01

Mfr. #:
Buy VEMT2503X01
Manufacturer:
Description:
Optical Sensors Phototransistors 20V 100mW 35Deg
Lifecycle:
New from this manufacturer.
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