VS-GB100YG120NT
www.vishay.com
Vishay Semiconductors
Revision: 22-Sep-17
5
Document Number: 93659
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, V
CC
= 600 V, R
g
= 4.7 , V
GE
= 15 V, L = 500 μH
Fig. 12 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
CC
= 600 V, R
g
= 4.7 , V
GE
= 15 V, L = 500 μH
Fig. 13 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, V
CC
= 600 V, I
C
= 100 A, V
GE
= 15 V, L = 500 μH
Fig. 14 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, V
CC
= 600 V, I
C
= 100 A, V
GE
= 15 V, L = 500 μH
Fig. 15 - Typical Diode Reverse Recovery Time vs. dI
F
/dt
V
rr
= 400 V, I
F
= 50 A
Fig. 16 - Typical Diode Reverse Recovery Current vs. dI
F
/dt
V
rr
= 400 V, I
F
= 50 A
0
1
2
3
4
5
6
7
8
9
20 40 60 80 100 120 140 160
Energy (mJ)
I
C
(A)
Eoff
Eon
10
100
1000
20 40 60 80 100 120 140 160
Switching Time (ns)
I
C
(A)
t
r
t
d(off)
t
d(on)
t
f
0
2
4
6
8
10
12
14
16
18
20
22
24
0 5 10 15 20 25 30 35 40 45 50
Energy (mJ)
R
g
(
)
Eoff
Eon
10
100
1000
10000
0 5 10 15 20 25 30 35 40 45 50
Switching Time (ns)
R
g
(Ω)
t
d(off)
t
f
t
d(on)
t
r
100
120
140
160
180
200
220
240
260
280
300
320
340
360
380
400
100 200 300 400 500
t
rr
(ns)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
4
6
8
10
12
14
16
18
20
22
24
26
28
30
100 200 300 400 500
I
rr
(A)
dI
F
/dt (A/μs)
T
J
= 25 °C
T
J
= 125 °C
