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APT10DC120HJ

P1-P3P4-P4
APT10DC120HJ
APT10DC120HJ – Rev 1 October 2012
www.microsemi.com
1-4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
R
Maximum DC reverse Voltage
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200 V
I
F(AV)
Maximum Average Forward Current
Duty cycle = 50% T
C
= 100°C 10
I
FSM
Non-Repetitive Forward Surge Current 10 µs
T
C
= 25°C
250
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
ISOTOP
V
RRM
= 1200V
I
C
= 10A @ Tc = 100°C
Application
Switch mode power supplies rectifier
Induction heating
Welding equipment
High speed rectifiers
Features
SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
ISOTOP
®
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
ISOTOP
®
SiC Diode
Full Bridge Power Module
~
~
-
+
APT10DC120HJ
APT10DC120HJ – Rev 1 October 2012
www.microsemi.com
2-4
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 1.6 1.8
V
F
Diode Forward Voltage I
F
= 10A
T
j
= 175°C 2.3 3
V
T
j
= 25°C 32 200
I
RM
Maximum Reverse Leakage Current V
R
= 1200V
T
j
= 175°C 56 1000
µA
Q
C
Total Capacitive Charge
I
F
= 10A, V
R
= 600V
di/dt =500A/µs
40 nC
f = 1MHz, V
R
= 200V 96
C Total Capacitance
f = 1MHz, V
R
= 400V 69
pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal resistance 1.65
R
thJA
Junction to Ambient 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -55 175
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
3.30 (.130)
4.57 (.180)
APT10DC120HJ
APT10DC120HJ – Rev 1 October 2012
www.microsemi.com
3-4
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Forward Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3 3.5
V
F
Forward Voltage (V)
I
F
Forward Current (A)
Reverse Characteristics
T
J
=25°C
T
J
=75°C
T
J
=125°C
T
J
=175°C
0
25
50
75
100
400 600 800 1000 1200 1400 1600
V
R
Reverse Voltage (V)
I
R
Reverse Current (µA)
Capacitance vs.Reverse Voltage
0
100
200
300
400
500
600
700
1 10 100 1000
V
R
Reverse Voltage
C, Capacitance (pF)
ISOTOP® is a registered trademark of ST Microelectronics NV
P1-P3P4-P4

APT10DC120HJ

Mfr. #:
Buy APT10DC120HJ
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - SiC
Lifecycle:
New from this manufacturer.
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