OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VESD05A5A-HSF-GS08

P1-P3P4-P6P7-P7
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 16-Jul-15
1
Document Number: 81655
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5-Line ESD-Protection Diode Array in LLP75
MARKING (example only)
Dot = pin 1 marking
XX = date code
YY = type code (see table below)
FEATURES
• Ultra compact LLP75-6L package
• Low profile < 0.6 mm
• 5-line ESD-protection
• Low leakage current I
R
< 0.1 μA
• Low load capacitance C
D
= 13 pF
• ESD-protection acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
• Working voltage range V
RWM
= 5 V
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
20453
1
19956
1
2
3
6
54
21001
XX
YY
ORDERING INFORMATION
DEVICE NAME ORDERING CODE
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
MINIMUM ORDER QUANTITY
VESD05A5A-HSF VESD05A5A-HSF-GS08 3000 15 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
VESD05A5A-HSF LLP75-6L AR 4.2 mg UL 94 V-0
MSL level 1
(according J-STD-020)
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS VESD05A5A-HSF
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Peak pulse current
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
I
PPM
2.5 A
BiSy-mode: each input (pin 1 to pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
2.5 A
Peak pulse power
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
P
PP
33 W
BiSy-mode: each input (pin 1 - pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; t
p
= 8/20 μs; single shot
43 W
ESD immunity
acc. IEC61000-4-2; 10 pulses
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2)
Contact
discharge
V
ESD
± 15 kV
Air
discharge
± 15 kV
ESD immunity
acc. IEC 61000-4-2 ; 10 pulses
BiSy-mode: each input (pin 1 to pin 6) to any other input pin.
Pin 2 not connected.
Contact
discharge
V
ESD
± 10 kV
Air
discharge
± 10 kV
Operating temperature Junction temperature T
J
-40 to +125 °C
Storage temperature T
STG
-55 to +150 °C
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 16-Jul-15
2
Document Number: 81655
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
APPLICATION NOTE:
a. With the VESD05A5A-HSF 5 different signal or data lines can be clamped to ground. Due to the different clamping levels in
forward and reverse direction the VESD05A5A-HSF clamping behavior is bidirectional and asymmetrical (BiAs).
b. If symmetrical clamping behaviour is required the VESD05A5A-HSF can also be used as a bidirectional symmetrical
protection device protecting up to 4 lines. In this case pin no. 2 must not be connected.
ELECTRICAL CHARACTERISTICS VESD05A5A-HSF (Between pin 1, 3, 4, 5 or 6, and pin 2)
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT
Protection paths Number of lines which can be protected N
channel
- - 5 lines
Reverse stand-off voltage Max. reverse working voltage V
RWM
--5V
Reverse voltage at I
R
= 0.1 μA V
R
5--V
Max. reverse current at V
R
= 5 V I
R
- < 0.01 0.1 μA
Reverse breakdown voltage at I
R
= 1 mA V
BR
66.77.5V
Reverse clamping voltage
at I
PP
= 1 A V
C
-910V
at I
PP
= I
PPM
= 2.5 A V
C
-1213V
Forward clamping voltage
at I
PP
= 1 A V
F
-22.5V
at I
PP
= I
PPM
= 2.5 A V
F
-3.24 V
Line capacitance
at V
R
= 0 V; f = 1 MHz C
D
-1315pF
at V
R
= 2.5 V; f = 1 MHz C
D
-8-pF
L1
L2
L3
L4
L5
19958
1
2
3
6
54
L1
L2
L3
L4
19959
1
2
3
6
54
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 16-Jul-15
3
Document Number: 81655
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 4 - Typical Forward Current I
F
vs. Forward Voltage V
F
Fig. 5 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Fig. 6 - Typical Peak Clamping Voltage V
C
vs.
Peak Pulse Current I
PP
0 %
20 %
40 %
60 %
80 %
100 %
120 %
-10 0 102030405060708090100
Time (ns)
Discharge Current I
ESD
Rise time = 0.7 ns to 1 ns
53 %
27 %
20557
0 %
20 %
40 %
60 %
80 %
100 %
010203040
Time (µs)
I
PPM
20 µs to 50 %
8 µs to 100 %
20548
19948
V
R
(V)
04321
14
16
12
C
D
(pF)
5
f = 1 MHz
2
10
8
6
4
0
19949
V
F
(V)
0.5 10.80.70.6
0.01
100
10
1
0.1
0.001
I
F
(mA)
0.9
1.1
19950
I
R
(µA)
0.01 1001010.1
1
5
4
3
2
0
V
R
(V)
10 000
1000
7
6
8
19951
I
PP
(A)
04321
- 4
4
2
0
- 2
- 6
V
C
(V)
8
6
10
14
12
Measured acc. IEC 61000-4-5 (8/20 µs - wave form)
forward
reverse
0.5 3.52.51.5
V
C
P1-P3P4-P6P7-P7

VESD05A5A-HSF-GS08

Mfr. #:
Buy VESD05A5A-HSF-GS08
Manufacturer:
Vishay Semiconductors
Description:
TVS Diodes / ESD Suppressors 5.0 Volt 33 Watt 5 Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet