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PMEG6020ETR,115

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
PMEG6020ETR
High-temperature 60 V, 2 A Schottky barrier rectifier
PMEG6020ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 October 2012 3 / 13
Symbol Parameter Conditions Min Max Unit
[2] - 680 mW
[3] - 1150 mW
P
tot
total power dissipation T
amb
≤ 25 °C
[1] - 2140 mW
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1][2] - - 220 K/W
[1][3] - - 130 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[1][4] - - 70 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
[5] - - 18 K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[4] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[5] Soldering point of cathode tab.
006aab649
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
- 1
t
p
(s)
10
- 3
10
2
10
3
10110
- 2
10
- 1
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
FR4 PCB, standard footprint
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PMEG6020ETR
High-temperature 60 V, 2 A Schottky barrier rectifier
PMEG6020ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 October 2012 4 / 13
006aab650
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
- 1
t
p
(s)
10
- 3
10
2
10
3
10110
- 2
10
- 1
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for cathode 1 cm
2
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab651
t
p
(s)
10
- 3
10
2
10
3
10110
- 2
10
- 1
10
1
10
2
Z
th(j-a)
(K/W)
10
- 1
duty cycle =
1
0.75
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
Ceramic PCB, Al
2
O
3
, standard footprint
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
I
F
= 0.1 A; T
j
= 25 °C - 300 340 mV
I
F
= 0.5 A; T
j
= 25 °C - 360 420 mV
I
F
= 1 A; T
j
= 25 °C - 400 460 mV
I
F
= 1.5 A; T
j
= 25 °C - 430 500 mV
I
F
= 2 A; T
j
= 25 °C - 460 530 mV
V
F
forward voltage
I
F
= 2 A; T
j
= -40 °C - 510 590 mV
NXP Semiconductors
PMEG6020ETR
High-temperature 60 V, 2 A Schottky barrier rectifier
PMEG6020ETR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 11 October 2012 5 / 13
Symbol Parameter Conditions Min Typ Max Unit
I
F
= 2 A; T
j
= 125 °C - 410 480 mV
I
F
= 2 A; T
j
= 150 °C - 390 460 mV
I
F
= 2 A; T
j
= 175 °C - 375 450 mV
V
R
= 5 V; T
j
= 25 °C; t
p
≤ 300 µs;
δ ≤ 0.02 ; pulsed
- 2.5 - µA
V
R
= 10 V; T
j
= 25 °C; t
p
≤ 300 µs;
δ ≤ 0.02 ; pulsed
- 3.5 - µA
V
R
= 60 V; T
j
= 25 °C; t
p
≤ 300 µs;
δ ≤ 0.02 ; pulsed
- 60 150 µA
V
R
= 60 V; T
j
= -40 °C; t
p
≤ 300 µs;
δ ≤ 0.02 ; pulsed
- 0.9 15 µA
I
R
reverse current
V
R
= 60 V; T
j
= 125 °C; t
p
≤ 300 µs;
δ ≤ 0.02 ; pulsed
- 27 100 mA
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C - 240 - pFC
d
diode capacitance
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C - 80 - pF
t
rr
reverse recovery time I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
- 8.5 - ns
V
FRM
peak forward recovery
voltage
I
F
= 1 A; dI
F
/dt = 40 A/µs; T
j
= 25 °C - 455 - mV
006aad125
V
F
(V)
0 0.90.60.3
10
-2
10
-3
1
10
-1
10
I
F
(A)
10
-4
(1)
(2)
(3)
(4) (5) (6)
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 4. Forward current as a function of forward
voltage; typical values
006aad126
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
I
R
(A)
10
-10
V
R
(V)
0 604020
(1)
(2)
(3)
(4)
(5)
(6)
(1) T
j
= 175 °C
(2) T
j
= 150 °C
(3) T
j
= 125 °C
(4) T
j
= 85 °C
(5) T
j
= 25 °C
(6) T
j
= −40 °C
Fig. 5. Reverse current as a function of reverse
voltage; typical values
P1-P3P4-P6P7-P9P10-P12P13-P14

PMEG6020ETR,115

Mfr. #:
Buy PMEG6020ETR,115
Manufacturer:
Nexperia
Description:
Schottky Diodes & Rectifiers PMEG6020ETR/SOD2/REEL 7" Q1/T1
Lifecycle:
New from this manufacturer.
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