STHV800L

STHV800
Octal ±90 V, ±2 A, 3-level RTZ, high-speed ultrasound pulser
Data brief
Features
High-density ultrasound transmitter
Two independent half-bridges per channel
0 to ±90 V output voltage
Power-up free
Synchronization of the input signals
(selectable) by an external clock
Up to 20 MHz operating frequency
Low-power, high-voltage, high-speed drivers
2 independently-supplied half bridges
(shorted-option) for each channel, one
dedicated to continuous wave (CW) mode
Main half bridge:
±2 A source and sink current
Down to 20 ps jitter
Low 2nd harmonic distortion
CW half bridge:
±0.3 A source and sink current
Down to 10 ps jitter
Very low power consumption
Fully integrated real clamping-to-ground
function
8 Ω synchronous active clamp
±2 A source and sink current
Fully integrated TR switch
8 Ω ON resistance
Up to 300 MHz BW
Current consumption down to 10 μA in
RX phase
Receiver multiplexing function
1.8 V to 3.6 V CMOS logic interface
Auxiliary integrated circuits
Noise blocking diodes
Anti-leakage on output node
Fully self-biasing architecture
Thermal protection
Latch-up free due to HV SOI technology
Very few external passive components or
supplies needed
Applications
Medical ultrasound imaging
Pulse waveform generator
NDT ultrsound transmission
Piezoelectric transducer drivers
Point-of-care ultrasound imaging equipment
Table 1: Device summary
Order code Package Packing
STHV800L TFLGA-56LD Tape and reel
TFLGA-56LD(8x8x0.9mm)
April 2014 DocID026018 Rev 2 1/5
For further information contact your local STMicroelectronics sales
office
www.st.com
Description
STHV800
1 Description
The STHV800 is an octal, monolithic, high-voltage and high-speed pulse generator. It is
designed for medical ultrasound applications, but can be used for other piezoelectric,
capacitive or MEMS transducers.
The device integrates a controller logic interface circuit (compatible with both 1.8 V and 3.3
V input signals), level translators, MOSFET gate drivers, noise blocking diodes, and high
power P-channel and N-channel MOSFETs as the output stage for each channel. These
MOSFETs are capable of providing more than 2 A of peak output current. Each channel
has a dedicated bridge in order to reduce power dissipation and jitter during continuous
wave mode (peak current is limited to 0.3 A). This CW bridge has dedicated power supplies
(HV_CW) which are fully independent on the main HV supplies.
These HV_CW supplies can be shorted to the HV supplies. The fundamental structure of
each channel also consists of active clamping to ground circuitry, anti-leakage and anti-
memory block, a thermal sensor to protect the device and an integrated TR-switch (just 8 Ω
as equivalent resistor ) to connect the HV output to its LV output, guaranteeing strong
decoupling during the transmission phase.
The eight independent T/R switches can be used in both a dedicated RX chain per channel
or in a multiplexing configuration.
The clamp circuit has a current capability up to 2 A and works directly on the output pin,
carrying this node exactly to zero. This feature allows minimized injection change during
the transition from clamp to RX state.
In addition, the STHV800 includes self-biasing circuitry which allows very low power
consumption during the RX phase (down to 200 µW global power dissipation) and thermal
shutdown block sensing by an external dedicated pin (THSD).
One of the main benefits of this device is that it requires very few external components:
only decoupling capacitors on the HV and LV supplies, and a resistor to pull up the THSD
pin (moreover, this resistor can be shared by many devices).
Each channel is driven independently by only 2 digital bits, which in CW mode become one
bit. An external clock can be used with the STHV800 to synchronize all the input signals.
This feature, however, is optional: if the CK pin is tied to ground the device works in
asynchronous mode.
2/5 DocID026018 Rev 2
STHV800
Figure 1: STHV800 internal block diagram
Figure 2: XDCR output in DUPLEX mode from single channel - PW and CW composition
example
GN D_PW R
LVOU T _8
TX
CW
Clamp
TRswitch
Input lo gic & h
ig
h vol
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lev el sh
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Noise blocking
diodes
Anti
memory
Thermal
sensor
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CHANNEL_1
CHANNEL_2
CHANNEL3
CHANNEL_4
CHANNEL5
CHANNEL_6
CHANNEL_7
CHANNEL_8
Self voltage
reference
Thermal
protection
HVP 3.3V
HVP_ C W 3.3V
HVM_ CW + 3 .3V
HVM + 3.3V
LVOU T _ 1
XD CR_ 8
XD CR_ 1
TH SD
STHV800
IN8 _1
IN1 _0
IN1 _1
CW
CK
VDDP
DVD DA GN D
D GN D
V
D
D
M
H VP _ CW
H
VP
H VM
HVM_ C
W
VC C_ LV
3.3V
VC C_ H V_CW
0 to 90 V
VC C_H V
0 to 90 V
VS S_H V_C W
0 to -90 V
VS S_H V
0 to -90V
VS S_LV
-3.3V
Can be
independent
or shorted
Can be
independent
or shorted
f > 100 MHz
1.6V to 3.6V
Input signal
VC C_D IG
1.8V or 3.3V
VC C_ LV
3.3V
Rp
10 kΩ
LN A
Cf
Cf
Cf
Cf
DocID026018 Rev 2 3/5

STHV800L

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Power Management Specialized - PMIC ANALOG CUSTOM PRODUCTS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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