VUO122-14NO7
011
1000
2000
3000
4000
5000
6000
V
F
[V]
I
F
[A]
0.4 0.8 1.2 1.6 2.0
0
40
80
120
160
200
10
-3
10
-2
10
-1
10
0
400
500
600
700
800
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 25 50 75 100 125 1500 1020304050
0
10
20
30
40
50
60
0 25 50 75 100 125 150
0
40
80
120
160
I
FSM
[A]
t[s]
t[ms]
I
2
t
[A
2
s]
P
tot
[W]
I
dAVM
[A]
T
A
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
t[ms]
Constants for Z
thJC
calculation:
iR
th
(K/W) t
i
(s)
1 0.08 0.012
2 0.04 0.007
3 0.29 0.036
4 0.19 0.102
0.8 x V
RRM
50 Hz
T
VJ
=45°C
T
VJ
= 45°C
V
R
= 0 V
R
thJA
:
0.6 KW
0.8 KW
1KW
2KW
4KW
8KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
=
125°C
150°C
T
VJ
=25°C
Fig. 1 Forward current vs.
voltage drop per diode
Fig. 2 Surge overload current
vs. time per diode
Fig. 3 I
2
t vs. time per diode
Fig. 4 Power dissipation vs. forward current
and ambient temperature per diode
Fig. 5 Max. forward current vs.
case temperature per diode
Fig. 6 Transient thermal impedance junction to case vs. time per diode
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20130327aData according to IEC 60747and per semiconductor unless otherwise specified
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