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VS-VSKH430-16PBF

P1-P3P4-P6P7-P8
VSK.430..PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Aug-13
4
Document Number: 93748
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Power Loss Characteristics
0
100
200
300
400
500
600
700
01002003004005
00
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.430..PbF Series
Per Junction
T = 130°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 70
0
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
VSK.430..PbF Series
Per Junction
T = 130°C
J
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
11010
0
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initial T = 130 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rat ed V Applied Following S ur ge .
RRM
VSK.430..PbF Series
Per Junction
6000
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
0.01 0.1
1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial T = 130°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
VSK.430..PbF Series
Per Junction
0 20406080100120
Maximum Allowable Ambient Temperature ( °C
)
R
=
0
.
0
5
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
0
9
K
/
W
0
.
1
2
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
6
K/
W
0
100
200
300
400
500
600
700
800
0 100 200 300 400 500 600 700
180°
120°
90°
60°
30°
Total RMS Output Current (A)
Maximum Total On-state Power Loss (W
)
Conduction Angle
VSK.430..PbF Series
Per M odule
T = 130°C
J
VSK.430..PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Aug-13
5
Document Number: 93748
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - On-State Power Loss Characteristics
Fig. 9 - On-State Power Loss Characteristics
Fig. 10 - On-State Voltage Drop Characteristics Fig. 11 - Thermal Impedance Z
thJC
Characteristics
020406080100120
Maximum Allowable Ambient Temperature (°C )
R
=
1
K
/
W
-
D
e
l
t
a
R
t
h
S
A
1
.
5
K
/
W
2
K
/
W
3
K
/
W
5
K
/
W
10
K/
W
1
5
K
/
W
0
500
1000
1500
2000
2500
3000
0 100 200 300 400 500 600 700 800 900
Total Out put Curren t (A)
Maximum Total Power Loss (W)
180°
(Sine)
180°
(Rect)
2 x VSK.430..PbF Series
Single Phase Bridge
Connected
T = 130
°C
J
0 20406080100120
Maximum Allowable Ambient Temperature ( °C)
R
=
0
.
0
0
5
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
.
0
1
K
/
W
0
.
0
2
K
/
W
0
.
0
3
K
/
W
0
.
0
5
K
/
W
0
.
1
K
/
W
0
.
2
K
/
W
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 200 400 600 800 1000 1200 1400
Total Output Current (A)
Maximum Total Power Loss (W)
120°
(Rect)
3 x VSK.430..PbF Series
Three Phase Bridge
Connected
T = 130°C
J
100
1000
10000
0.511.522.533
.5
T = 25 °C
J
Instantaneous On-state Current (A)
Instan taneous On-state Voltage (V)
T = 130°C
J
VSK.430..PbF Series
Per Junction
VSK.430..PbF Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Aug-13
6
Document Number: 93748
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12 - Gate Characteristics
ORDERING INFORMATION TABLE
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95283
0.1
1
10
100
0.001 0.01 0.1 1 10 10
0
VGD
IGD
(b)
(a)
Tj=25 °C
Tj=-40 °C
(2) (3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
VSK.430..PbF Series Frequency Limited by PG(AV )
Tj=130
°C
(4)
Device code
- Module type
- Circuit configuration (see end of datasheet)
- Current rating
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
- Lead (Pb)-free
VSK T 430 - 20 PbF
2
3
4
5
5
1
32
4
1
+
7
(K2)
6(G2)
-
4
(K1)
5(G1)
~
1
2
3
+
7(K2)
6(G2)
-
~
1
2
3
+
-
4(K1)
5(G1)
~
1
2
3
VSKT...
VSKH...
VSKL...
P1-P3P4-P6P7-P8

VS-VSKH430-16PBF

Mfr. #:
Buy VS-VSKH430-16PBF
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules RECOMMENDED ALT 844-VS-VSKH500-16PBF
Lifecycle:
New from this manufacturer.
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