FDD86367-F085

FDD86367-F085 N-Channel PowerTrench
®
MOSFET
www.onsemi.com
4
Figure 5.
110100200
0.01
0.1
1
10
100
1000
100us
1ms
10ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
T
C
= 25
o
C
100ms
Forward Bias Safe Operating Area
0.001 0.01 0.1 1 10 100 1000
1
10
100
500
STARTING T
J
= 1 50
o
C
ST AR TING T
J
= 25
o
C
I
AS
, AVA LANCHE CURREN T (A)
t
AV
, TIME IN AVALANCHE (ms)
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
NOTE: Refer to ON Semiconductor Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
Figure 7.
246810
0
50
100
150
200
250
300
350
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 175
o
C
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
V
DD
= 5V
I
D
, DRAIN CURRENT (A)
V
GS
, G ATE TO SOURCE VOLTAGE (V)
Transfer Characteristics Figure 8.
0.00.20.40.60.81.01.21.4
0.1
1
10
100
350
T
J
= 25
o
C
T
J
= 175
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Forward Diode Characteristics
Figure 9.
012345
0
50
100
150
200
250
300
350
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80μs PULSE WIDTH
Tj=25
o
C
Saturation Characteristics Figure 10.
012345
0
50
100
150
200
250
300
350
5.5V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
15V Top
10V
8V
7V
6V
5.5V
5V Bottom
80μs PULSE WIDTH
Tj=175
o
C
Saturation Characteristics
Typical Characteristics
FDD86367-F085 N-Channel PowerTrench
®
MOSFET
www.onsemi.com
5
Figure 11.
45678910
0
10
20
30
40
50
I
D
=
80A
PULSE DU RAT ION = 80μs
DUTY CYCLE = 0.5% MAX
r
DS( on)
, DRAIN TO SOURCE
ON-RESISTANCE (
mΩ)
V
GS
, GATE TO SOURCE VO LTAGE (V )
T
J
= 25
o
C
T
J
= 175
o
C
R
DSON
vs. Gate Voltage Figure 12. Normalized R
DSON
vs. Junction
Temperature
-80 -40 0 40 80 120 160 200
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
I
D
= 80A
V
GS
= 10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE(
o
C)
Figure 13.
-80 -40 0 40 80 120 160 200
0.0
0.3
0.6
0.9
1.2
1.5
V
GS
= V
DS
I
D
= 2 50μA
NORMALIZED GATE
THRESHOLD VOLTAGE
T
J
, JUNCTION TEMPERATURE(
o
C)
Normalized Gate Threshold Voltage vs.
Temperature
Figure 14.
-80-40 0 40 80120160200
0.90
0.95
1.00
1.05
1.10
I
D
= 5mA
NORMA LIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
T
J
, JUNCTION TEMPERATURE (
o
C)
Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
Figure 15.
0.1 1 10 80
10
100
1000
10000
f = 1MHz
V
GS
= 0V
C
rss
C
oss
C
iss
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs. Drain to Source
Voltage
Figure 16.
0 20406080
0
2
4
6
8
10
V
DD
= 32V
40V
48V
ID = 80A
Q
g
, GATE CHARGE( nC)
V
GS
, GATE TO SOURCE VOLTAGE(V)
Gate Charge vs. Gate to Source
Voltage
Typical Characteristics
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FDD86367-F085

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET MV7 80/20V1000A N-CH PowerTrench MOSFET
Lifecycle:
New from this manufacturer.
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