2003 Jun 27 3
NXP Semiconductors Product data sheet
Low V
F
(MEGA) Schottky barrier diode
PMEG6010AED
ELECTRICAL CHARACTERISTICS
T
amb
= 25 °C; unless otherwise specified.
Notes
1. Pulse test: t
p
= 300 μs; δ = 0.02.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
P
R
are a significant part of the total power losses.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for cathode 1 cm
2
.
2. Device mounted on a printed-circuit board, single-sided copper; tinplated, mounting pad for cathode 6 cm
2
.
SYMBOL PARAMETER CONDITIONS MAX. UNIT
V
F
continuous forward voltage I
F
= 0.1 A 400 mV
I
F
= 1 A 650 mV
I
R
continuous reverse current V
R
= 60 V; see Fig.3 350 μA
V
R
= 60 V; T
j
= 100 °C;
notes
1 and 2
8 mA
C
d
diode capacitance V
R
= 4 V; f = 1 MHz; see Fig.4 60 pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 230 K/W
in free air; note 2 180 K/W
