PESDXU1UT_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 August 2009 5 of 13
NXP Semiconductors
PESDxU1UT series
Ultra low capacitance ESD protection diode in SOT23 package
6. Characteristics
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2
Table 8. Characteristics
T
amb
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
RWM
reverse stand-off voltage
PESD3V3U1UT - - 3.3 V
PESD5V0U1UT - - 5.0 V
PESD12VU1UT - - 12 V
PESD15VU1UT - - 15 V
PESD24VU1UT - - 24 V
I
RM
reverse leakage current
PESD3V3U1UT V
RWM
= 3.3 V - 0.25 2 µA
PESD5V0U1UT V
RWM
= 5.0 V - 0.03 1 µA
PESD12VU1UT V
RWM
= 12 V - < 1 50 nA
PESD15VU1UT V
RWM
= 15 V - < 1 50 nA
PESD24VU1UT V
RWM
= 24 V - < 1 50 nA
V
BR
breakdown voltage I
R
= 5 mA
[2]
PESD3V3U1UT 5.8 6.4 6.9 V
PESD5V0U1UT 7.0 7.6 8.2 V
PESD12VU1UT 14.2 15.0 16.7 V
PESD15VU1UT 17.1 18.9 20.3 V
PESD24VU1UT 25.4 27.8 30.3 V
C
d
diode capacitance f = 1 MHz; V
R
= 0 V
[2]
- 0.6 1.5 pF
V
CL
clamping voltage
[1][2]
PESD3V3U1UT I
PP
= 1 A - - 9 V
I
PP
= 5 A - - 20 V
PESD5V0U1UT I
PP
= 1 A - - 12 V
I
PP
= 5 A - - 21 V
PESD12VU1UT I
PP
= 1 A - - 23 V
I
PP
= 5 A - - 39 V
PESD15VU1UT I
PP
= 1 A - - 28 V
I
PP
= 5 A - - 53 V
PESD24VU1UT I
PP
= 1 A - - 40 V
I
PP
= 3 A - - 76 V
r
dif
differential resistance I
R
= 1 mA
PESD3V3U1UT - - 400 Ω
PESD5V0U1UT - - 80 Ω
PESD12VU1UT - - 200 Ω
PESD15VU1UT - - 225 Ω
PESD24VU1UT - - 300 Ω
