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STPS1L40A

P1-P3P4-P6P7-P9P10-P12P13-P13
July 2016
DocID5507 Rev 7
1/13
This is information on a product in full production.
www.st.com
STPS1L40
Low drop power Schottky rectifier
Datasheet - production data
Features
Very small conduction losses
Negligible switching losses
Low forward voltage drop
Surface mount miniature packages
Avalanche capability specified
Description
Single chip Schottky rectifiers suited to switched
mode power supplies and high frequency DC to
DC converters.
Packaged in SMA, SMB and SOD123Flat, this
device is especially intended for surface
mounting and used in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
Table 1: Device summary
Symbol
I
F(AV)
1 A
V
RRM
40 V
V
F
(typ.)
0.37 V
T
j
(max.)
175 °C
SMBSMA
K
A
K
A
SOD123Flat
A
K
K
A
Characteristics
STPS1L40
2/13
DocID5507 Rev 7
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
40
V
I
F(RMS)
Forward rms current
SMA/SMB
8
A
I
F(AV)
Average forward current
δ = 0.5, square wave
SMA/SMB
T
L
= 155 °C
1
A
SOD123Flat
T
L
= 160 °C
I
FSM
Surge non repetitive
forward current
SMA/SMB
t
p
= 10 ms sinusoidal
60
A
SOD123Flat
50
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
65
W
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature range
(1)
-40 to +175
°C
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
R
th(j-l)
Junction to lead
SMA
30
°C/W
SMB
25
SOD123Flat
20
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
35
µA
T
j
= 125 °C
-
6
10
mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
-
0.50
V
T
j
= 125 °C
-
0.37
0.42
T
j
= 25 °C
I
F
= 2 A
-
0.63
T
j
= 125 °C
-
0.50
0.61
Notes:
(1)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.23 x I
F(AV)
+ 0.19 x I
F
2
(RMS)
STPS1L40
Characteristics
DocID5507 Rev 7
3/13
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus ambient
temperature (SMA, δ = 0.5)
Figure 3: Average forward current versus ambient
temperature (SMB, δ = 0.5)
Figure 4: Average forward current versus ambient
temperature (SOD123Flat, δ = 0.5)
Figure 5: Normalized avalanche power derating
versus junction temperature (T
j
= 125 °C)
Figure 6: Relative variation of thermal impedance
junction to ambient versus pulse duration (SMA)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
F(AV)
(A)
δ = 0.05
δ = 0.1
δ = 0.2 δ = 0.5
δ = 1
P
F(AV)
(W)
T
δ
= tp/T
tp
I
F(AV)
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
δ
= tp/T
tp
SMA
T
amb
(°C)
I
F(AV)
(A)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
= tp/T
tp
δ
SMB
T
amb
(°C)
I
F(AV)
(A)
0
1
2
3
4
5
0 25 50 75 100 125 150 175
R
th(j-a)
= R
th(j-l)
T
= tp/T
tp
δ
SOD123Flat
T
amb
(°C)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
t
P
(s)
Single pulse
SMA
Z
th(j-a)
/R
th(j-a)
P1-P3P4-P6P7-P9P10-P12P13-P13

STPS1L40A

Mfr. #:
Buy STPS1L40A
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 1.0 Amp 40 Volt
Lifecycle:
New from this manufacturer.
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