IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test 140 mS
C
iss
60 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 8.0 pF
C
rss
2.0 pF
t
d(on)
12 ns
t
r
V
GS
= 10 V, V
DS
= 500 V, I
D
= I
D25
12 ns
t
d(off)
R
G
= 50 Ω (External) 28 ns
t
f
28 ns
Q
g(on)
8nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 I
D25
1.8 nC
Q
gd
3nC
R
thJC
3 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
SD
I
F
= 100 mA, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= 0.75 A, -di/dt = 10 A/µs, 1.5 µs
V
DS
= 25 V
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 .086 .094
A1 0.89 1.14 0.35 .045
b 0.64 0.89 .025 .035
b1 0.76 1.14 .030 .045
b2 5.21 5.46 .205 .215
c 0.46 0.58 .018 .023
c1 0.46 0.58 .018 .023
D 5.97 6.22 .235 .245
E 6.35 6.73 .250 .265
e 2.28 BSC .090 BSC
e1 4.57 BSC .180 BSC
H 17.02 17.78 .670 .700
L 8.89 9.65 .350 .380
L1 1.91 2.28 .075 .090
L2 0.89 1.27 .035 .050
L3 1.15 1.52 .045 .060
1. Gate
2. Drain
3. Source
4. Drain
Back heatsink
TO-251 AA Outline
IXTU 01N80
IXTY 01N80
TO-252 AA
Dim. Millimeter Inches
Min. Max. Min. Max.
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
1 Anode
2 NC
3 Anode
4 Cathode
