VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 Series
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Vishay Semiconductors
Revision: 11-Feb-16
1
Document Number: 94886
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on
conducted EMI should be met
DESCRIPTION
The VS-20ETF..S-M3 soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK)
I
F(AV)
20 A
V
R
200 V, 400 V, 600 V
V
F
at I
F
1.3 V
I
FSM
300 A
t
rr
60 ns
T
J
max. 150 °C
Diode variation Single die
Snap factor 0.6
Base
cathode
+
2
13
Anode
--
Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Sinusoidal waveform 20 A
V
RRM
200 to 600 V
I
FSM
300 A
V
F
10 A, T
J
= 25 °C 1.2 V
t
rr
1 A, 100 A/μs 60 ns
T
J
Range -40 to +150 °C
VOLTAGE RATINGS
PART NUMBER
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
VS-20ETF02S-M3 200 300
5VS-20ETF04S-M3 400 500
VS-20ETF06S-M3 600 700
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 97 °C, 180° conduction half sine wave 20
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 250
10 ms sine pulse, no voltage reapplied 300
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 316
A
2
s
10 ms sine pulse, no voltage reapplied 442
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A
2
s
